MUBW35-12A8 IXYS, MUBW35-12A8 Datasheet - Page 8

• Manufacturer Part Number: MUBW35-12A8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW35-12A8

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 35A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1.1mA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 225W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 80
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.30
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 50
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 35
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.5
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.55
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 0.70
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS All rights reserved
E
Brake Chopper T7 / D7
Z
I
0.0001
off
C
thJC
0.001
0.01
K/W
0.1
50
40
30
20
10
mJ
10
A
0.001
0
4
3
2
1
0
1
0
0
V
Fig. 19 Typ. output characteristics
Fig. 21 Typ. turn off energy and switching
Fig. 23 Typ. transient thermal impedance
V
V
R
T
GE
CE
GE
VJ
G
E
off
= 15 V
= 600 V
= ±15 V
= 82 Ω
= 125°C
5
1
single pulse
0.01
times versus collector current
10
2
15
T
VJ
0.1
= 25°C
20
3
V
CE
I
C
25
T
t
VJ
1
= 125°C
4
30
t
t
d(off)
f
V
diode
IGBT
A
s
35
10
5
800
600
400
200
0
ns
t
R
E
10000
off
I
1000
F
100
Ω
3.0
2.5
2.0
mJ
50
40
30
20
10
A
0
0
0
0
Fig. 20 Typ. forward characteristics
Fig. 22 Typ. turn off energy and switching
Fig. 24 Typ. thermistorresistance
Temperature Sensor NTC
V
V
I
T
C
CE
GE
VJ
E
off
= 600 V
= ±15 V
= 20 A
= 125°C
20
25
1
of free wheeling diode
times versus gate resistor
versus temperature
40
T
VJ
50
= 125°C
2
60
MUBW 35-12 A8
75
80
T
3
VJ
V
100
F
= 25°C
100
T
R
4
125
G
120
t
V
t
d(off)
f
C
Ω
140
150
20070912a
5
1000
750
500
250
0
ns
8 - 8
t