CPV364M4F Vishay, CPV364M4F Datasheet - Page 2
![IGBT SIP MODULE 600V 15A IMS-2](/photos/14/29/142934/vs-cpv363m4u_sml.jpg)
CPV364M4F
Manufacturer Part Number
CPV364M4F
Description
IGBT SIP MODULE 600V 15A IMS-2
Manufacturer
Vishay
Specifications of CPV364M4F
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.6V @ 15V, 27A
Current - Collector (ic) (max)
27A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 30V
Power - Max
63W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
19-SIP (13 Leads), IMS-2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Not Compliant
Other names
*CPV364M4F
VS-CPV364M4F
VS-CPV364M4F
VSCPV364M4F
VSCPV364M4F
VS-CPV364M4F
VS-CPV364M4F
VSCPV364M4F
VSCPV364M4F
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CPV364M4FPBF
Manufacturer:
Vishay Semiconductors
Quantity:
135
Electrical Characteristics @ T
Switching Characteristics @ T
Document Number: 93610
CPV364M4F
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
V
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Charge
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
––– 1.35
Min. Typ. Max. Units
600
––– 0.69
––– 1.60
––– 1.35
–––
–––
–––
–––
–––
–––
––– 1.32
–––
–––
–––
–––
–––
–––
–––
––– 0.46
––– 0.86
–––
–––
–––
–––
––– 2200 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
9.2
–––
–––
–––
––– 2500
––– ±100
160
290
-12
1.3
1.2
100
220
410
140
220
188
160
12
2.5
4.0
6.5
15
37
42
18
39
19
29
42
74
80
–––
–––
–––
–––
––– mV/°C V
–––
250
1.5
6.0
1.7
1.6
160
–––
–––
330
240
–––
–––
–––
–––
–––
–––
–––
–––
120
180
600
–––
–––
–––
1.8
6.0
23
56
60
10
V/°C
A/µs
µA
nA
V
V
S
V
nC
mJ
mJ
nC
pF
ns
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
T
I
V
Energy losses include "tail" and
diode reverse recovery.
V
V
T
T
T
T
T
T
T
T
See Fig. 9, 10, 11, 18
ƒ = 1.0MHz
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
J
J
J
J
J
J
J
J
J
J
CC
GE
GE
GE
GE
CC
= 15A
= 27A
= 15A, T
= 15A
= 15A, T
= 15A
= 15A, V
= 15A, V
= 25°C
= 150°C,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
Conditions
= 150°C
= 150°C
Conditions
= 250µA
= 1.0mA
See Fig.
See Fig.
See Fig.
See Fig.
C
G
G
= 250µA
= 250µA
= 480V
= 480V
= 600V
= 600V, T
= 27A
= 10
= 10
See Fig. 9, 10, 11, 18
17
14
15
16
See Fig. 8
See Fig. 7
www.vishay.com
V
See Fig. 2, 5
See Fig. 13
J
di/dt =200Aµs
GE
= 150°C
V
I
F
= 15V
R
= 15A
= 200V
2