CPV364M4F Vishay, CPV364M4F Datasheet - Page 8

IGBT SIP MODULE 600V 15A IMS-2

CPV364M4F

Manufacturer Part Number
CPV364M4F
Description
IGBT SIP MODULE 600V 15A IMS-2
Manufacturer
Vishay
Datasheets

Specifications of CPV364M4F

Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.6V @ 15V, 27A
Current - Collector (ic) (max)
27A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 30V
Power - Max
63W
Input
Standard
Ntc Thermistor
No
Mounting Type
Through Hole
Package / Case
19-SIP (13 Leads), IMS-2
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Not Compliant
Other names
*CPV364M4F
VS-CPV364M4F
VS-CPV364M4F
VSCPV364M4F
VSCPV364M4F

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPV364M4F
Manufacturer:
IR
Quantity:
26
Part Number:
CPV364M4F
Quantity:
292
Part Number:
CPV364M4FPBF
Manufacturer:
Vishay Semiconductors
Quantity:
135
Document Number: 93610
CPV364M4F
Fig. 18c -
I
LM
Fig. 18a -
V c c
80%
of Vce
, E
td( on)
1 0% +V g
10% Ic
on
, E
Test Waveforms for Circuit of Fig. 18a,
off(diode)
t1
Test Circuit for Measurement of
Defining E
V ce
tr
, t
430µF
rr
, Q
5% Vc e
9 0% Ic
on
rr
, I
, t
G ATE VO LTA G E D .U .T.
rr
+V g
d(on)
, t
d(on)
Same t ype
device as
D.U.T.
, t
D.U.T.
r
, t
t2
E on =
Ipk
DUT V O LTA G E
AN D C URR E NT
r
, t
d(off)
t1
V c e ie dt
t2
Ic
, t
f
Fig. 18b -
Fig. 18d -
+ Vg e
Ic
Test Waveforms for Circuit of Fig. 18a, Defining
V pk
td (off)
DIO D E RE V E RS E
RE C O V ER Y EN ER G Y
Ic
10 % Vc e
10% V cc
tx
Test Waveforms for Circuit of Fig. 18a,
Defining E
t1
Irr
E
off
, t
V ce
d(off)
t3
90% Vge
Ic
trr
rec
, t
tf
, t
f
rr
, Q
t2
90% Ic
DIO DE RE CO V E RY
W AV E FO RM S
t4
rr
Er ec =
, I
E off =
10 % Ir r
rr
www.vishay.com
5% Ic
Q rr =
t3
V d id d t
t4
t1
V ce ic d t
tx
t1 +5µ S
id dt
trr
V cc
8

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