GA150TD120U Vishay, GA150TD120U Datasheet
GA150TD120U
Specifications of GA150TD120U
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GA150TD120U Summary of contents
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... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA150TD120U PRELIMINARY Ultra-Fast Max. -40 to +150 -40 to +125 PD - 5.067A Speed IGBT 1200 CES ...
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... GA150TD120U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage 1200 (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage — GE(th Forward Transconductance fe I Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter ...
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... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 10 ° = 15V 1 5 2.5 3.0 Fig Typical Transfer Characteristics GA150TD120U oth: D uty 5° °C sink riv ified ipation = W 134 10 100 ° 125 C J ° ...
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... GA150TD120U 200 150 100 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0 0.50 0.20 0.10 0.05 0. 0.01 ( 0.01 0.0001 0.001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 PULSE WIDTH 3.0 2.0 1.0 -60 -40 -20 125 150 ° Fig Typical Collector-to-Emitter Voltage vs ...
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... SHORTED 100 Fig Typical Gate Charge vs. 1000 R = 15Ohm R = 15V 960V CC 100 -60 -40 -20 Fig Typical Switching Losses vs. GA150TD120U = 400V = 171A 200 400 600 800 1000 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage 720V 300 150 100 120 140 160 ° Junction Temperature ( ...
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... GA150TD120U 150 R = 15Ohm 150 C ° 720V CC 125 V = 15V GE 100 100 150 200 I , Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 25° ° 1.0 2.0 3 rwa rd Vo lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 250 300 350 0 25000 20000 ...
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... ° 5° 500 800 1100 1400 di /dt - (A/µ Fig Typical Reverse Recovery vs. di www.irf.com 250 I = 300A 150A 75A 200 F 150 100 50 0 1700 2000 500 /dt Fig Typical Recovery Current vs GA150TD120U I = 300A 150A 75A ° °C J 800 1100 1400 1700 /µ / 2000 ...
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... GA150TD120U Fig Test Circuit for Measurement off(diode d( td(on) t1 Fig Test Waveforms for Circuit of Fig. 17, Defining d(on 10 (off d(off) f Fig Test Waveforms for Circuit of Fig. 17, Defining Ipk Ic t2 Vce Ic dt Vce Fig 90 90 t1+5µ S Vce off = d(off trr 10% Irr ...
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... Figure 21. Macro Waveforms for 1000V 50V 600 0µ F 100 V Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 17's L D.U. 600V Figure 22. Pulsed Collector Current GA150TD120U Test Circuit 600V @25°C C Test Circuit 9 ...
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... GA150TD120U Notes: Repetitive rating 20V, pulse width limited by GE max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 80µs; single shot. Case Outline — DOUBLE INT-A-PAK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave ...