GA150TD120U Vishay, GA150TD120U Datasheet - Page 2

• Manufacturer Part Number: GA150TD120U
• Description: IGBT FAST 1200V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 25.63nF @ 30V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA150TD120U
Electrical Characteristics @ T
Dynamic Characteristics - T
di
Details of note
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
CES
GES
d(on)
f
r
d(off)
rr
rr
(rec)
fe
V
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
2
ies
oes
res
g
ge
gc
rr
GE(th)
M
/dt
/ T
J
Collector-to-Emitter Breakdown Voltage 1200
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage —
Forward Transconductance
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
through
Parameter
Parameter
b
are on the last page
J
= 125°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— 25630 —
—
—
—
—
— 12381 —
—
1139 1709
1139
2524
201
192
377
414
208
552
342
221
186
133
-11
2.4
2.2
2.7
2.6
—
—
—
29
32
61
—
—
500
288
566
2.9
6.0
3.5
—
—
—
—
20
—
90
—
—
—
—
—
—
—
—
—
—
—
2
mV/°C V
A/µs
mA
nA
mJ
nC
nC
ns
pF
ns
V
S
V
A
V
V
V
I
V
V
V
I
I
V
V
I
T
R
I
V
V
See Fig.17 through Fig.21
V
V
ƒ = 1 MHz
I
R
R
V
di/dt=1260A/µs
C
F
F
C
C
C
GE
GE
GE
CE
CE
GE
GE
GE
J
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
= 150A, V
= 150A, V
= 1.75 mA
= 171A
= 150A
= 150A
= 25°C
= 15
= 0V, I
= 15V, I
= V
= 25V, I
= 0V, V
= 0V, V
= ±20V
= 15 , R
= ±15V
= 0V
= 0
= 15V, I
= 400V, V
= 30V
720V
720V
GE
, I
C
CE
CE
GE
C
C
C
C
GE
= 1mA
Conditions
Conditions
G2
= 1.75mA
= 150A
= 150A
= 150A, T
GE
= 1200V
= 1200V, T
= 0V, T
= 0V
= 0
= 15V
www.irf.com
J
= 125°C
J
= 125°C
J
= 125°C