GA75TS60U Vishay, GA75TS60U Datasheet - Page 3

• Manufacturer Part Number: GA75TS60U
• Description: IGBT FAST 600V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.88nF @ 30V
• Power - Max: 285W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant

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1000
100
10
70
60
50
40
30
20
10
1.0
0
Fig. 2 - Typical Output Characteristics
0.1

T = 150 C
J
25
V
CE
o

T = 25 C
, Collector-to-Emitter Voltage (V)
J
1.5
o

Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
2.0
= 15V
(Load Current = I
1
2.5
f, Frequency (KHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
1
5.0

T = 150 C
J
V
GE
10
25
6.0
, Gate-to-Emitter Voltage (V)
o
GA75TS60U
For both:
D uty cy cle: 50%
T = 125°C
T
G ate drive as specified
P ow e r Dis sip ation =
Power Dissipation = 65 W
J
s ink
= 90°C

7.0
T = 25 C
J

V
5µs PULSE WIDTH
V
CC
80µs PULSE WIDTH
CE
o
= 50V
270
= 25V
25V
8.0
W
3
9.0
100