GA75TS60U Vishay, GA75TS60U Datasheet - Page 6

• Manufacturer Part Number: GA75TS60U
• Description: IGBT FAST 600V 75A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA75TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.88nF @ 30V
• Power - Max: 285W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant

GA75TS60U
6
1 0 0 0
Fig. 13 - Typical Forward Voltage Drop vs.
1 0 0
25
20
15
10
1 0
Fig. 11 - Typical Switching Losses vs.
5
0
1.0
0

R
R
T
V
V
F o r w a rd V o lta g e D ro p - V
CC
GE
G
J
G1
Instantaneous Forward Current
Collector-to-Emitter Current
I
= 27 ;R
= 125 C
= 360V
= 15V
= Ohm
C
40
, Collector-to-emitter Current (A)
2.0
°
G2
80
= 0
3.0
120
T = 125 °C
T = 25°C
J
J
4.0
F M
160
(V )
5.0
200
240
Fig. 14 - Typical Stored Charge vs. di
1 2 0 0 0
1 0 0 0 0
2 0 0
1 6 0
1 2 0
8 0 0 0
6 0 0 0
4 0 0 0
2 0 0 0
8 0
4 0
0
0
0
5 0 0
V
T
V
G E
J
C E
G E
V
Fig. 12 - Reverse Bias SOA
CE
= 125°C
= 20V
m easured at term inal (Peak V oltage)
1 0 0
I = 15 0A
I = 75 A
I = 38 A
F
F
F
, Collector-to-Emitter Voltage (V)
SAFE OPERATING AREA
2 0 0
1 0 0 0
d i /dt - (A /µs)
3 0 0
f
4 0 0
V = 36 0 V
T = 12 5 °C
T = 25 °C
R
J
J
1 5 0 0
www.irf.com
5 0 0
6 0 0
f
/dt
2 0 0 0
7 0 0
A