HGT1N40N60A4D Fairchild Semiconductor, HGT1N40N60A4D Datasheet - Page 3

• Manufacturer Part Number: HGT1N40N60A4D
• Description: IGBT SMPS N-CHAN 600V SOT-227
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1N40N60A4D

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 40A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 298W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -
• Lead Free Status / Rohs Status: Compliant

©2001 Fairchild Semiconductor Corporation
Electrical Specifications
NOTES:
Typical Performance Curves
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
2. Turn-Off Energy Loss (E
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
300
100
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
120
100
10
80
60
40
20
0
1
25
P
f
f
R
MAX1
MAX2
C
ØJC
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
PARAMETER
TEMPERATURE
EMITTER CURRENT
= 0.42
I
= 0.05 / (t
= (P
CE
, COLLECTOR TO EMITTER CURRENT (A)
50
D
o
- P
C/W, SEE NOTES
T
C
C
d(OFF)I
) / (E
, CASE TEMPERATURE (
OFF
ON2
75
+ t
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
d(ON)I
+ E
T
10
OFF
J
= 25
)
)
100
o
C, Unless Otherwise Specified (Continued)
20
(Unless Otherwise Specified)
SYMBOL
o
C)
R
t
θ JC
125
rr
T
V
75
T
J
GE
C
o
= 150
CE
C
= 15V
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
V
15V
o
GE
C
I
IGBT
Diode
EC
150
100
= 40A, dI
TEST CONDITIONS
EC
/dt = 200A/ µ s
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
225
200
175
150
125
100
12
10
75
50
25
8
6
4
2
0
10
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
V
J
J
CE
as the IGBT. The diode type is specified in Figure 20.
= 150
11
V
100
= 390V, R
V
GE
ON1
CE
o
, GATE TO EMITTER VOLTAGE (V)
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
is the turn-on loss of the IGBT only. E
G
200
12
G
= 2.2Ω, V
= 2.2Ω, T
MIN
-
-
-
300
13
GE
J
= 125
= 15V, L = 100µH
TYP
400
48
14
o
-
-
C
I
t
SC
SC
500
15
HGT1N40N60A4D Rev. B
MAX
0.42
1.8
55
600
ON2
16
UNITS
1200
1000
800
600
400
200
o
o
C/W
C/W
is the
ns
700