HGT1N40N60A4D Fairchild Semiconductor, HGT1N40N60A4D Datasheet - Page 7

• Manufacturer Part Number: HGT1N40N60A4D
• Description: IGBT SMPS N-CHAN 600V SOT-227
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1N40N60A4D

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 40A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Power - Max: 298W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -
• Lead Free Status / Rohs Status: Compliant

©2001 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
10
10
10
-1
-2
0
10
R
G
HGT1N40N60A4D
-5
0.50
0.20
0.10
0.05
0.02
0.01
= 2.2Ω
SINGLE PULSE
10
-4
FIGURE 23. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
L = 100µH
HGT1N40N60A4D
+
-
(Unless Otherwise Specified) (Continued)
V
DD
10
-3
= 390V
t
1
, RECTANGULAR PULSE DURATION (s)
10
-2
V
V
I
CE
GE
CE
DUTY FACTOR, D = t
PEAK T
J
FIGURE 25. SWITCHING TEST WAVEFORMS
= (P
D
t
X Z
d(OFF)I
10
90%
θJC
-1
1
10%
/ t
X R
2
t
fI
θJC
) + T
E
OFF
C
90%
10
P
D
0
E
ON2
10%
t
t
d(ON)I
HGT1N40N60A4D Rev. B
1
t
2
t
rI
10
1