MUBW50-12E8 IXYS, MUBW50-12E8 Datasheet
MUBW50-12E8
Specifications of MUBW50-12E8
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MUBW50-12E8 Summary of contents
Page 1
... Hz FSM 25°C tot C Symbol Conditions 25° 125° 25° RRM T = 125° (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved (CBI3 NTC 9 Three Phase Inverter V = 1200 V CES ...
Page 2
... F80 C Symbol Conditions /dt = -500 A/µ 600 (per diode) thJC © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125°C 100 VJ V CES = 22 Ω 125° 350 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 1 125°C 2.1 VJ 4.5 = 25° ...
Page 3
... T = 125° 25° RRM T = 125° /dt = -400 A/µ 600 thJC © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 225 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2 125°C 2.5 VJ 4.5 = 25° ...
Page 4
... Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") © 2007 IXYS All rights reserved Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Maximum Ratings °C -40...+125 °C 150 °C -40 ...
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... Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180° 1 K/W 0.1 Z thJC 0.01 0.001 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2007 IXYS All rights reserved 500 T = 45° 400 I FSM 300 T = 150°C VJ ...
Page 6
... Fig. 8 Typ. output characteristics 125° Fig. 10 Typ. forward characteristics of free wheeling diode 200 400 600 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode 25° 300 ns 240 t rr 180 120 = 125°C = 600 MUBW5012E8 0 800 1000 A/μs 20070912a ...
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... Fig.16 Typ. turn off energy and switching times versus gate resistor 1 diode single pulse 0.00001 0.0001 0.001 0.01 0.1 t Fig. 18 Typ. transient thermal impedance 800 ns t d(off) 600 t 400 200 100 A 1200 ns t d(off) 1000 t 800 600 400 200 Ω 100 120 IGBT MUBW5012E8 20070912a ...
Page 8
... V = 600 ± 125° off Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC Ω 1000 100 100 Fig. 24 Typ. thermistorresistance versus temperature 800 t d(off) ns 600 400 200 Ω MUBW5012E8 125 C 150 T 20070912a ...