MUBW50-12E8 IXYS, MUBW50-12E8 Datasheet

MUBW50-12E8

Manufacturer Part Number

MUBW50-12E8

Description

MODULE IGBT CBI E3

Manufacturer

IXYS

Datasheet

1.MUBW50-12E8.pdf (8 pages)

Specifications of MUBW50-12E8

Configuration

Three Phase Inverter with Brake

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

2.4V @ 15V, 50A

Current - Collector (ic) (max)

90A

Current - Collector Cutoff (max)

800µA

Input Capacitance (cies) @ Vce

3.8nF @ 25V

Power - Max

350W

Input

Three Phase Bridge Rectifier

Ntc Thermistor

Yes

Mounting Type

Chassis Mount

Package / Case

Channel Type

Collector-emitter Voltage

1.2kV

Collector Current (dc) (max)

90A

Gate To Emitter Voltage (max)

±20V

Pin Count

Mounting

Screw

Operating Temperature (min)

-40C

Operating Temperature (max)

125C

Operating Temperature Classification

Automotive

Vrrm, Rect 1/3 Ph., (v)

1600

Idavm, Tc = 80°c, Rect 1/3 Ph., (a)

140

Rthjc, Typ, Rect 1/3 Ph., (k/w)

0.94

Vces, Inv 3 - Ph., (v)

1200

Ic25, Tc = 25°c, Inv 3 - Ph., (a)

Ic80, Tc = 80°c, Inv 3 - Ph., (a)

Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)

1.9

Rthjc, Typ, Inv 3 - Ph., (k/w)

0.35

Vces, Br Chopper, (v)

1200

Ic80, Tc = 80°c, Br Chopper, (a)

Rthjc, Typ, Br Chopper, (k/w)

0.55

Package Style

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

Lead Free Status / RoHS Status

Compliant, Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

MUBW50-12E8

Quantity:

Current page: 1 of 8
Download datasheet (359Kb)

Converter - Brake - Inverter Module

Three Phase

Rectifier

Symbol

IXYS reserves the right to change limits, test conditions and dimensions.

Input Rectifier Bridge D11 - D16

FAV

DAVM

FSM

FAVM

FSM

RRM

tot

D12

D11

RRM

thJC

= 1600 V

= 70 A

= 700 A

D13

D14

Conditions

(per diode)

= 50 A; T

D15

D16

= 80°C; sine 180°

= 80°C; rectangular; d =

= 25°C

= V

= 25°C; t = 10 ms; sine 50 Hz

RRM

Brake Chopper

C25

CES

CE(sat)

; T

= 25°C

= 125°C

= 25°C

= 125°C

= 1200 V

= 52 A

= 2.2 V

Three Phase

Inverter

C25

; bridge

CES

CE(sat)

= 25°C, unless otherwise specified)

= 1200 V

= 90 A

= 1.9 V

NTC

min.

Characteristic Values

Maximum Ratings

typ.

1.1

0.8

1600

140

700

135

max.

0.05 mA

0.94 K/W

1.3

(CBI3)

See outline drawing for pin arrangement

Application: AC motor drives with

• Input from single or three phase grid

• Three phase synchronous or

• electric braking operation

Features

• High level of integration - only one

• IGBT technology with low saturation

• Epitaxial free wheeling diodes with

• Industry standard package with

• Temperature sense included

asynchronous motor

power semiconductor module

required for the whole drive

voltage, low switching losses and tail

current, high RBSOA and short circuit

ruggedness

Hiperfast and soft reverse recovery

insulated copper base plate and

soldering pins for PCB mounting

MUBW 50-12 E8

20070912a

E72873

1 - 8

Related parts for MUBW50-12E8

MUBW50-12E8 Summary of contents

Page 1

... Hz FSM 25°C tot C Symbol Conditions 25° 125° 25° RRM T = 125° (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved (CBI3 NTC 9 Three Phase Inverter V = 1200 V CES ...

Page 2

... F80 C Symbol Conditions /dt = -500 A/µ 600 (per diode) thJC © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125°C 100 VJ V CES = 22 Ω 125° 350 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 1 125°C 2.1 VJ 4.5 = 25° ...

Page 3

... T = 125° 25° RRM T = 125° /dt = -400 A/µ 600 thJC © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 225 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2 125°C 2.5 VJ 4.5 = 25° ...

Page 4

... Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") © 2007 IXYS All rights reserved Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Maximum Ratings °C -40...+125 °C 150 °C -40 ...

Page 5

... Fig. 4 Power dissipation versus direct output current and ambient temperature, sin 180° 1 K/W 0.1 Z thJC 0.01 0.001 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2007 IXYS All rights reserved 500 T = 45° 400 I FSM 300 T = 150°C VJ ...

Page 6

... Fig. 8 Typ. output characteristics 125° Fig. 10 Typ. forward characteristics of free wheeling diode 200 400 600 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode 25° 300 ns 240 t rr 180 120 = 125°C = 600 MUBW5012E8 0 800 1000 A/μs 20070912a ...

Page 7

... Fig.16 Typ. turn off energy and switching times versus gate resistor 1 diode single pulse 0.00001 0.0001 0.001 0.01 0.1 t Fig. 18 Typ. transient thermal impedance 800 ns t d(off) 600 t 400 200 100 A 1200 ns t d(off) 1000 t 800 600 400 200 Ω 100 120 IGBT MUBW5012E8 20070912a ...

Page 8

... V = 600 ± 125° off Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC Ω 1000 100 100 Fig. 24 Typ. thermistorresistance versus temperature 800 t d(off) ns 600 400 200 Ω MUBW5012E8 125 C 150 T 20070912a ...

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