MUBW50-12E8 IXYS, MUBW50-12E8 Datasheet - Page 2

• Manufacturer Part Number: MUBW50-12E8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-12E8

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 3.8nF @ 25V
• Power - Max: 350W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 90A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 140
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 0.94
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 90
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 62
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.35
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 35
• Rthjc, Typ, Br Chopper, (k/w): 0.55
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
Symbol
I
I
Symbol
V
I
t
R
© 2007 IXYS All rights reserved
Output Inverter T1 - T6
C25
C80
CM
CES
GES
d(off)
Output Inverter D1 - D6
F25
F80
RM
SC
d(on)
r
f
rr
CES
GES
CEK
tot
CE(sat)
GE(th)
on
off
F
ies
Gon
thJC
thJC
Conditions
T
Continuous
T
T
V
RBSOA; Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Conditions
T
T
Conditions
I
I
V
(per diode)
C
C
F
F
VJ
C
C
C
C
C
GE
CE
CE
CE
CE
CE
R
= 50 A; V
= 60 A; di
= 50 A; V
= 2 mA; V
= 25°C
= 80°C
= 25°C
= 25°C
= 80°C
Inductive load, T
V
V
= 600 V; V
= 600 V; V
= 25°C to 150°C
= 900 V; V
= V
= ± 15 V; R
= 0 V; V
= 25 V; V
CE
GE
CES
= 600 V; I
= ± 15 V; R
; V
GE
GE
F
GE
GE
GE
/dt = -500 A/µs; T
GE
GE
GE
= 0 V; T
= 15 V; T
GE
= ± 20 V
G
= V
= 0 V; T
= 0 V; f = 1 MHz
= 0 V
= 15 V; I
= 22 Ω; T
= ± 15 V; R
C
G
CE
= 50 A
= 22 Ω
VJ
T
T
T
= 125°C
VJ
VJ
VJ
VJ
VJ
VJ
C
= 25°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
VJ
= 50 A
G
= 125°C
= 22 Ω; T
VJ
(T
= 125°C
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
min.
4.5
Characteristic Values
Characteristic Values
Maximum Ratings
Maximum Ratings
680
350
200
typ.
typ.
1.9
2.1
0.8
3.8
2.1
1.5
80
50
30
41
1200
± 20
V
6
4
100
350
110
CES
90
62
10
70
max.
max.
0.35 K/W
0.61 K/W
200
2.4
6.5
0.8 mA
2.5
mA
µs
mJ
mJ
nC
W
nA
nF
ns
ns
ns
ns
ns
V
V
A
A
A
A
A
V
V
V
V
V
A
Conduction
IGBT (typ. at V
T1-T6
T7
Diode (typ. at T
D1-D6
D7
D11-D16
Thermal Response
IGBT (typ.)
T1-T6
T7
Diode (typ.)
D1-D6
D7
D11-D16
Equivalent Circuits for Simulation
C
C
C
C
C
C
C
C
C
C
th1
th2
th1
th2
th1
th2
th1
th2
th1
th2
V
V
= 0.206 J/K; R
= 1.307 J/K; R
= 0.128 J/K; R
= 0.961 J/K; R
= 0.086 J/K; R
= 0.621 J/K; R
V
V
V
= 0.138 J/K; R
= 0.957 J/K; R
= 0.038 J/K; R
= 0.435 J/K; R
0
0
0
0
MUBW 50-12 E8
0
= 0.98 V; R
= 1.25 V; R
= 1.27 V; R
= 0.83 V; R
= 0.95 V; R
GE
J
= 125°C)
= 15 V; T
0
0
0
0
th1
th2
th1
th2
th1
th2
0
th1
th2
th1
th2
= 23.2 m Ω
= 31.2 m Ω
= 5.8 m Ω
= 5.5 m Ω
= 45 m Ω
= 0.262 K/W
= 0.088 K/W
= 0.421 K/W
= 0.129 K/W
= 0.738 K/W
= 0.202 K/W
= 0.48 K/W
= 0.13 K/W
= 1.74 K/W
= 0.36 K/W
J
= 125°C)
20070912a
2 - 8