MWI100-12E8 IXYS, MWI100-12E8 Datasheet
MWI100-12E8
Specifications of MWI100-12E8
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MWI100-12E8 Summary of contents
Page 1
... Ω = ± off MHz ies 600 Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 13 14, 20 MWI MKI Maximum Ratings 1200 ± 20 165 115 = 125°C 200 VJ V CES = 12 Ω ...
Page 2
... S d Strike distance in air A R with heatsink compound thCH Weight pins and 17 for MWI only IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 200 130 Characteristic Values min. typ. = 25°C 2.3 ...
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... Fig. 2 Typ. output characteristics T = 125° 25° Fig. 4 Typ. forward characteristics of free wheeling diode T = 125° 600 120 200 400 600 800 A/μs -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 300 ns 250 t rr 200 t rr 150 100 50 MWI100-12E8 0 1000 20070912a ...
Page 4
... Fig.10 Typ. turn off energy and switching times versus gate resistor 1 single pulse 0.0001 0.001 0.01 0.1 t Fig. 12 Typ. transient thermal impedance 1000 ns 800 t d(off) t 600 400 200 200 1000 t d(off) ns 750 t 500 250 Ω 20 diode IGBT MWI100-12E8 20070912a ...