MWI100-12A8 IXYS, MWI100-12A8 Datasheet
MWI100-12A8
Specifications of MWI100-12A8
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MWI100-12A8 Summary of contents
Page 1
... Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 13 ...
Page 2
... Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight Dimensions 0.0394") IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 200 130 Characteristic Values min. typ. = 25°C 2.3 ...
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... V Fig. 3 Typ. transfer characteristics 600 100 100 200 300 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 300 250 I C 200 11 V 150 100 300 250 I F 200 ...
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... V = 600 ± off I = 100 125° Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 0.01 single pulse 0.001 0.0001 0.001 0.01 0.1 Fig. 12 Typ. transient thermal impedance 150 200 Ω diode IGBT MWI100-12A8 20070912a ...