MWI50-12E7 IXYS, MWI50-12E7 Datasheet - Page 2

• Manufacturer Part Number: MWI50-12E7
• Description: MOD IGBT SIXPACK H-BRDG 1200V E2
• Manufacturer: IXYS

Specifications of MWI50-12E7

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 3.8nF @ 25V
• Power - Max: 350W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 90A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 18
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 90
• Ic80, Tc = 80°c, Igbt, (a): 62
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.9
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 4.0
• Rthjc, Max, Igbt, (k/w): 0.35
• If25, Tc = 25°c, Diode, (a): 110
• If80, Tc = 80°c, Diode, (a): 70
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
I
I
Symbol
V
I
t
R
Symbol
T
T
T
V
M
Symbol
R
d
d
R
Weight
© 2007 IXYS All rights reserved
Diodes
F25
F80
RM
Module
rr
VJ
VJM
stg
S
A
F
ISOL
thJC
pin-chip
thCH
d
Conditions
T
T
Conditions
I
I
V
(per diode)
Conditions
operating
I
Mounting torque (M5)
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
F
F
ISOL
C
C
R
= 50 A; V
= 50 A; di
= 25°C
= 80°C
= 600 V; V
≤ 1 mA; 50/60 Hz
GE
F
/dt = -500 A/µs; T
GE
= 0 V; T
= 0 V
T
VJ
VJ
= 25°C
= 125°C
VJ
Dimensions in mm (1 mm = 0.0394")
pins 5, 6, 7, 8 and 15 for MWI only
= 125°C
* only for
devices with
NTC option
min.
min.
Characteristic Values
Characteristic Values
6
6
-40...+125
-40...+150
-40...+125
Maximum Ratings
Maximum Ratings
2.7 - 3.3
0.02
200
180
typ.
typ.
2.2
1.6
5
40
2500
110
70
max.
max.
0.61 K/W
2.6
Nm
K/W
mm
mm
mΩ
V~
°C
°C
°C
ns
A
A
V
V
A
g
Conduction
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
IGBT (typ.)
Free Wheeling Diode (typ.)
Equivalent Circuits for Simulation
C
C
C
C
th1
th2
th1
th2
= 0.151 J/K; R
= 1.003 J/K; R
V
= 0.22 J/K; R
= 1.74 J/K; R
V
0
0
= 0.95 V; R
= 1.3 V; R
GE
MWI 50-12 E7
MKI 50-12 E7
= 15 V; T
th1
th2
th1
th2
0
0
= 24 m Ω
= 6 m Ω
= 0.26 K/W
= 0.09 K/W
= 0.483 K/W
= 0.127 K/W
J
= 125°C)
J
= 125°C)
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