MWI50-12E7 IXYS, MWI50-12E7 Datasheet - Page 4

• Manufacturer Part Number: MWI50-12E7
• Description: MOD IGBT SIXPACK H-BRDG 1200V E2
• Manufacturer: IXYS

Specifications of MWI50-12E7

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 3.8nF @ 25V
• Power - Max: 350W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 90A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 18
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 90
• Ic80, Tc = 80°c, Igbt, (a): 62
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.9
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 4.0
• Rthjc, Max, Igbt, (k/w): 0.35
• If25, Tc = 25°c, Diode, (a): 110
• If80, Tc = 80°c, Diode, (a): 70
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS All rights reserved
E
E
I
CM
on
on
15.0
12.5
10.0
120
100
mJ
20
16
12
mJ
7.5
5.0
2.5
0.0
80
60
40
20
A
8
4
0
0
Fig. 11 Reverse biased safe operating area
0
0
0
Fig. 7
Fig. 9
R
T
V
V
I
T
VJ
G
C
VJ
CE
GE
E on
= 22 Ω
= 125°C
200
E on
= 600 V
= ±15 V
20
= 50 A
= 125°C
20
RBSOA
Typ. turn on energy and switching
times versus gate resistor
Typ. turn on energy and switching
times versus collector current
400
40
40
600
60
60
800 1000 1200 1400
R
V
V
R
T
80
80
VJ
CE
GE
G
I
G
C
= 22 Ω
= 600 V
= ±15 V
= 125°C
100
V
100
CE
t d(on)
t r
t r
t d(on)
A
Ω
120
120
100
90
80
70
60
50
40
30
20
10
0
ns
300
250
200
150
100
50
0
ns
V
t
t
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
0.00001 0.0001 0.001
mJ
12
10
8
6
4
2
0
8
6
4
2
0
1
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
E off
V
V
I
T
C
VJ
CE
GE
20
E off
= 600 V
= ±15 V
= 50 A
= 125°C
20
times versus collector current
times versus gate resistor
40
40
single pulse
0.01
60
60
diode
R
V
V
R
T
0.1
MWI 50-12 E7
MKI 50-12 E7
80
VJ
CE
GE
G
G
80
I
C
= 600 V
= 22 Ω
= ±15 V
= 125°C
t
100
1
t d(off)
t f
100
MWI5012E7
IGBT
t d(off)
t f
Ω
s
120
A
10
20070912a
800
600
400
200
0
ns
1200
1000
800
600
400
200
0
ns
4 - 4
t
t