IXFN64N50P IXYS, IXFN64N50P Datasheet - Page 2

MOSFET N-CH 500V 61A SOT-227

IXFN64N50P

Manufacturer Part Number
IXFN64N50P
Description
MOSFET N-CH 500V 61A SOT-227
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFN64N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
61A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
8700pF @ 25V
Power - Max
700W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Forward Transconductance Gfs (max / Min)
50 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
61 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
9700
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
625
Rthjc, Max, (ºc/w)
0.2
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN64N50P
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN64N50P
Quantity:
120
Company:
Part Number:
IXFN64N50P
Quantity:
1 200
Part Number:
IXFN64N50PD2
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN64N50PD2
Quantity:
100
Notes:
1) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
S
SM
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
d(on)
r
d(off)
f
rr
fs
RM
SD
one or moreof the following U.S. patents:
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
Test Conditions
V
V
V
I
V
Test Conditions
V
Repetitive
I
I
V
D
F
F
DS
GS
R
DS
GS
GS
= I
= 25A, -di/dt = 100 A/µs
= 32 A, R
= 100V
= 0.5 V
= 0 V
= 20 V; I
= 10 V, V
S
= 0 V, V
, V
GS
= 0 V, Note 1
DSS
G
= 2 Ω (External)
D
DS
, V
DS
= 32 A, Note 1
= 25 V, f = 1 MHz
4,850,072
4,881,106
GS
= 0.5 V
= 10 V
DSS
4,931,844
5,017,508
5,034,796
, I
D
= I
(T
(T
J
J
T
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
30
Characteristic Values
Characteristic Values
8700
Typ. Max.
Typ. Max.
0.05
970
150
0.6
50
90
30
25
85
22
50
50
6,162,665
6,259,123 B1
6,306,728 B1
6
0.18 ° C/W
150
200
1.5
64
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
SOT-227B Outline
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFN64N50P

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