IXFN64N50P IXYS, IXFN64N50P Datasheet - Page 3

• Manufacturer Part Number: IXFN64N50P
• Description: MOSFET N-CH 500V 61A SOT-227
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFN64N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 61A
• Vgs(th) (max) @ Id: 5.5V @ 8mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 8700pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Forward Transconductance Gfs (max / Min): 50 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 61 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): 9700
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 625
• Rthjc, Max, (ºc/w): 0.2
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
70
60
50
40
30
20
10
64
56
48
40
32
24
16
0
8
0
1
0
0
0
V
I
D
GS
20
Fig. 3. Output Characte r is tics
1
2
Fig. 5. R
= 32A V alue vs . Dr ain Cur re nt
Fig. 1. Output Characte r is tics
= 10V
40
2
4
V
V
DS(on)
V
GS
GS
I
60
D
D S
V
@ 125
= 10V
D S
- A mperes
= 10V
@ 25
3
6
- V olts
8V
7V
8V
7V
Nor m alize d to
- V olts
80
º
º
C
8
C
4
6V
5V
100
6V
5V
T
T
J
10
J
5
= 25ºC
120
= 125ºC
12
140
6
160
14
7
160
140
120
100
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
80
60
40
20
70
60
50
40
30
20
10
0
1
0
-50
-50
Fig. 2. Exte nde d Output Characte r is tics
0
Fig. 4. R
V alue vs . Junction Te m pe r atur e
V
-25
-25
GS
Fig . 6. Dr ain Cu r r e n t vs . Cas e
4
= 10V
T
DS(on
0
0
T
C
J
- Degrees Centigrade
- Degrees Centigrade
8
V
T e m p e r atu r e
)
25
25
GS
Norm alize d to I
@ 25
V
D S
= 10V
I
D
50
50
8V
12
- V olts
= 64A
º
C
7V
5V
6V
IXFN64N50P
75
75
16
I
100
100
D
D
= 32A
= 32A
20
125
125
150
150
24