APTM20AM04FG Microsemi Power Products Group, APTM20AM04FG Datasheet - Page 2

• Manufacturer Part Number: APTM20AM04FG
• Description: PWR MODULE MOSFET 200V 372A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM20AM04FG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 186A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 372A
• Vgs(th) (max) @ Id: 5V @ 10mA
• Gate Charge (qg) @ Vgs: 560nC @ 10V
• Input Capacitance (ciss) @ Vds: 28900pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM20AM04FGMI; APTM20AM04FGMI

Dynamic Characteristics
Source - Drain diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
R
V
T
T
dv/dt
I
I
C
V
C
C
Q
Q
E
E
E
E
DS(on)
GS(th)
Q
Q
DSS
d(off)
I
GSS
d(on)
T
T
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
t
S
oss
iss
rss
on
off
on
off
SD
rr
gd
S
gs
rr
g
r
f
≤ - 372A
Peak Diode Recovery
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Continuous Source current
(Body diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
di/dt ≤ 700A/µs
All ratings @ T
V
R
≤ V
DSS
www.microsemi.com
j
Test Conditions
V
I
V
di
I
V
di
S
S
= 25°C unless otherwise specified
Test Conditions
V
V
V
V
V
Test Conditions
V
V
f = 1MHz
V
V
I
Inductive switching @ 125°C
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
GS
R
R
D
D
D
D
S
S
= -372A
= -372A
GS
GS
/dt = 400A/µs
/dt = 400A/µs
T
GS
GS
GS
GS
DS
GS
Bus
GS
Bus
G
GS
GS
= 133V
= 133V
= 372A
= 372A
= 372A, R
= 372A, R
= 0V, I
j
= 1.2Ω
= 0V,V
= 0V,V
≤ 150°C
= 10V, I
= V
= ±30 V, V
= 0V
= 25V
= 10V
= 15V
= 15V, V
= 15V, V
= 100V
= 133V
DS
, I
S
DS
DS
= - 372A
D
D
G
G
= 200V
= 160V
Bus
Bus
= 10mA
= 1.2Ω
= 1.2Ω
= 186A
DS
= 133V
= 133V
= 0V
Tc = 25°C
Tc = 80°C
T
T
T
T
j
j
j
j
T
T
= 25°C
= 125°C
= 25°C
= 125°C
j
j
= 25°C
= 125°C
APTM20AM04FG
Min
Min
Min
3
3396
3716
3744
3944
28.9
9.32
0.58
13.6
Typ
560
212
268
116
Typ
Typ
3.6
32
64
88
4
2000
±200
Max
Max
Max
500
372
278
230
450
1.3
5
5
5
Unit
Unit
Unit
V/ns
mΩ
µA
µC
nA
nF
nC
µJ
µJ
ns
ns
A
V
V
2 – 6