APTM20AM04FG Microsemi Power Products Group, APTM20AM04FG Datasheet - Page 5

• Manufacturer Part Number: APTM20AM04FG
• Description: PWR MODULE MOSFET 200V 372A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM20AM04FG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 186A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 372A
• Vgs(th) (max) @ Id: 5V @ 10mA
• Gate Charge (qg) @ Vgs: 560nC @ 10V
• Input Capacitance (ciss) @ Vds: 28900pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM20AM04FGMI; APTM20AM04FGMI

100000
10000
1000
100
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
Threshold Voltage vs Temperature
-50 -25
0
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
30
40
www.microsemi.com
Crss
Coss
Ciss
50
10000
1000
100
14
12
10
10
Gate Charge vs Gate to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
1
0
-50 -25
1
APTM20AM04FG
Single pulse
T
T
limited by
R
I
T
D
DSon
J
C
V
J
V
I
80 160 240 320 400 480 560 640
=150°C
=372A
D
Maximum Safe Operating Area
=25°C
ON resistance vs Temperature
=25°C
DS
GS
= 186A
T
J
=10V
, Drain to Source Voltage (V)
, Junction Temperature (°C)
0
10
Gate Charge (nC)
25
50
V
DS
75 100 125 150
100
=100V
V
DS
V
100ms
100µs
1ms
10ms
DS
=40V
=160V
1000
5 – 6