APTM20AM04FG Microsemi Power Products Group, APTM20AM04FG Datasheet - Page 5
![PWR MODULE MOSFET 200V 372A SP6](/photos/14/30/143054/aptm20am04fg_sml.jpg)
APTM20AM04FG
Manufacturer Part Number
APTM20AM04FG
Description
PWR MODULE MOSFET 200V 372A SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTM20AM04FG.pdf
(6 pages)
Specifications of APTM20AM04FG
Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 186A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
372A
Vgs(th) (max) @ Id
5V @ 10mA
Gate Charge (qg) @ Vgs
560nC @ 10V
Input Capacitance (ciss) @ Vds
28900pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTM20AM04FGMI
APTM20AM04FGMI
APTM20AM04FGMI
100000
10000
1000
100
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
Threshold Voltage vs Temperature
-50 -25
0
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
30
40
www.microsemi.com
Crss
Coss
Ciss
50
10000
1000
100
14
12
10
10
Gate Charge vs Gate to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
1
0
-50 -25
1
APTM20AM04FG
Single pulse
T
T
limited by
R
I
T
D
DSon
J
C
V
J
V
I
80 160 240 320 400 480 560 640
=150°C
=372A
D
Maximum Safe Operating Area
=25°C
ON resistance vs Temperature
=25°C
DS
GS
= 186A
T
J
=10V
, Drain to Source Voltage (V)
, Junction Temperature (°C)
0
10
Gate Charge (nC)
25
50
V
DS
75 100 125 150
100
=100V
V
DS
V
100ms
100µs
1ms
10ms
DS
=40V
=160V
1000
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