APTM100UM45FAG Microsemi Power Products Group, APTM100UM45FAG Datasheet - Page 2

• Manufacturer Part Number: APTM100UM45FAG
• Description: MOSFET N-CH 1000V 215A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100UM45FAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 52 mOhm @ 107.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 215A
• Vgs(th) (max) @ Id: 5V @ 30mA
• Gate Charge (qg) @ Vgs: 1602nC @ 10V
• Input Capacitance (ciss) @ Vds: 42700pF @ 25V
• Power - Max: 5000W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM100UM45FAGMI; APTM100UM45FAGMI

Dynamic Characteristics
Source - Drain diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
R
V
T
T
dv/dt
I
I
C
V
C
C
Q
Q
E
E
E
E
DS(on)
GS(th)
Q
Q
DSS
d(off)
I
GSS
d(on)
T
T
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
t
S
oss
iss
rss
on
off
on
off
SD
rr
gd
S
gs
rr
g
r
f
≤ - 215A
Peak Diode Recovery
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Continuous Source current
(Body diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
di/dt ≤ 700A/µs
All ratings @ T
V
R
≤ V
DSS
www.microsemi.com
j
Test Conditions
V
I
V
di
S
= 25°C unless otherwise specified
Test Conditions
V
V
V
V
V
Test Conditions
V
V
f = 1MHz
V
V
I
Inductive switching @ 125°C
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
GS
R
D
D
D
D
S
= - 215A
GS
GS
/dt = 600A/µs
T
GS
GS
GS
GS
DS
GS
Bus
GS
Bus
G
GS
GS
= 670V
= 215A
= 215A
= 215A, R
= 215A, R
= 0V, I
j
= 0.5Ω
= 0V,V
= 0V,V
≤ 150°C
= 10V, I
= V
= ±30 V, V
= 0V
= 25V
= 10V
= 15V
= 15V, V
= 15V, V
= 500V
= 670V
DS
, I
S
DS
DS
= - 215A
D
= 1000V
= 800V
D
G
G
Bus
Bus
= 30mA
= 0.5Ω
= 0.5Ω
= 107.5A
DS
= 670V
= 670V
APTM100UM45FAG
= 0V
Tc = 25°C
Tc = 80°C
T
T
T
T
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
T
T
j
j
= 25°C
= 125°C
Min
Min
Min
3
1602
1038
42.7
Typ
204
140
Typ
Typ
7.6
1.3
7.2
4.3
5.8
18
14
55
12
45
12
36
±600
Max
Max
Max
600
215
160
310
625
1.3
52
18
3
5
Unit
Unit
Unit
V/ns
mΩ
mA
µA
µC
nA
nF
nC
mJ
mJ
ns
ns
A
V
V
2 – 6