APTM100UM45FAG Microsemi Power Products Group, APTM100UM45FAG Datasheet - Page 5
APTM100UM45FAG
Manufacturer Part Number
APTM100UM45FAG
Description
MOSFET N-CH 1000V 215A SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTM100UM45FAG.pdf
(6 pages)
Specifications of APTM100UM45FAG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
52 mOhm @ 107.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
215A
Vgs(th) (max) @ Id
5V @ 30mA
Gate Charge (qg) @ Vgs
1602nC @ 10V
Input Capacitance (ciss) @ Vds
42700pF @ 25V
Power - Max
5000W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTM100UM45FAGMI
APTM100UM45FAGMI
APTM100UM45FAGMI
100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
0.85
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
DS
T
J
, Drain to Source Voltage (V)
T
, Junction Temperature (°C)
10
C
, Case Temperature (°C)
0
0
25 50
25 50 75 100 125 150
20
30
75 100 125 150
40
Coss
Crss
www.microsemi.com
Ciss
50
APTM100UM45FAG
1000
14
12
10
100
8
6
4
2
0
10
2.5
2.0
1.5
1.0
0.5
0.0
1
Gate Charge vs Gate to Source Voltage
0
-50 -25
1
I
T
D
limited by R
J
V
I
=215A
D
=25°C
Maximum Safe Operating Area
V
GS
=107.5A
350
T
DS
ON resistance vs Temperature
=10V
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
Single pulse
T
T
J
C
=150°C
0
=25°C
Gate Charge (nC)
700
DS
10
on
V
25
DS
1050 1400 1750 2100
=500V
50
V
DS
75 100 125 150
=200V
100
V
DS
10ms
=800V
100µs
1ms
1000
5 – 6