APTM100A13SCG Microsemi Power Products Group, APTM100A13SCG Datasheet - Page 3

• Manufacturer Part Number: APTM100A13SCG
• Description: PWR MODULE MOSFET 1000V 65A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100A13SCG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 5V @ 6mA
• Gate Charge (qg) @ Vgs: 562nC @ 10V
• Input Capacitance (ciss) @ Vds: 15200pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM100A13SCGMI; APTM100A13SCGMI

SiC Parallel diode ratings and characteristics
Thermal and package characteristics
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Symbol Characteristic
Symbol Characteristic
Torque
SP6 Package outline
V
V
R
T
I
V
Q
T
Wt
T
RRM
RM
Q
ISOL
I
STG
thJC
F
C
C
F
J
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
Test Conditions
I
I
di/dt =2000A/µs
f = 1MHz, V
f = 1MHz, V
F
F
V
= 40A
= 40A, V
R
=1200V
To heatsink
For terminals
R
R
R
= 600V
Transistor
Series diode
Parallel diode
= 200V
= 400V
T
T
T
T
Tc = 125°C
j
j
j
j
= 25°C
= 125°C
= 25°C
= 175°C
APTM100A13SCG
M6
M5
1200
2500
Min
Min
-40
-40
-40
3
2
Typ
400
800
112
360
264
Typ
1.6
2.6
40
Max
1600
8000
Max
0.10
0.65
0.35
150
125
100
280
3.5
1.8
3.0
5
°C/W
Unit
Unit
N.m
µA
nC
pF
A
°C
V
V
V
g
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