APTM100A13SCG Microsemi Power Products Group, APTM100A13SCG Datasheet - Page 4

• Manufacturer Part Number: APTM100A13SCG
• Description: PWR MODULE MOSFET 1000V 65A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100A13SCG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 5V @ 6mA
• Gate Charge (qg) @ Vgs: 562nC @ 10V
• Input Capacitance (ciss) @ Vds: 15200pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM100A13SCGMI; APTM100A13SCGMI

Typical MOSFET Performance Curve
0.12
0.08
0.06
0.04
0.02
1.4
1.3
1.2
1.1
0.9
0.8
180
150
120
0.1
90
60
30
1
0.00001
0
0
0
0
Low Voltage Output Characteristics
Normalized to
V
GS
V
0.05
=10V @ 32.5A
0.9
0.7
0.5
0.3
0.1
30
DS
4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
, Drain to Source Voltage (V)
R
V
DS(on)
GS
I
D
, Drain Current (A)
=15&10V
8
60
vs Drain Current
0.0001
12
90
16
V
GS
120
=10V
20
V
GS
150
0.001
=20V
rectangular Pulse Duration (Seconds)
24
6.5V
5.5V
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7V
6V
5V
180
28
0.01
Single Pulse
70
60
50
40
30
20
10
360
300
240
180
120
0
60
0
25
DC Drain Current vs Case Temperature
0
APTM100A13SCG
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
V
1
> I
GS
T
50
Transfert Characteristics
D
C
(on)xR
, Gate to Source Voltage (V)
2
, Case Temperature (°C)
T
J
=125°C
3
DS
T
(on)MAX
75
J
=25°C
4
5
1
100
6
T
J
=-55°C
7
125
8
9 10
10
150
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