IXTN46N50L IXYS, IXTN46N50L Datasheet - Page 4

• Manufacturer Part Number: IXTN46N50L
• Description: MOSFET N-CH 500V 46A SOT-227B
• Manufacturer: IXYS

Specifications of IXTN46N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 6V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 15V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 46 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 46
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 7000
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): 600
• Pd, (w): 700
• Rthjc, Max, (k/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0.5
5
0
f = 1MHz
6
5
T
0.6
J
Fig. 11. Capacitance
7
Fig. 9. Source Current vs .
Fig. 7. Input Adm ittance
Source -To-Drain Voltage
= 125ºC
10
-40ºC
25ºC
T
J
8
= 125ºC
V
15
V
0.7
V
9
G S
S D
D S
- Volts
- Volts
1 0
20
- Volts
0.8
1 1
C iss
C oss
C rss
25
1 2
T
30
J
0.9
= 25ºC
1 3
35
1 4
1 5
40
1
20
18
16
14
12
10
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
V
I
I
D
G
30
DS
= 23A
= 10mA
10
Fig. 8. Trans conductance
= 250V
60
Fig. 10. Gate Charge
20
Q
90
G
I
- nanoCoulombs
D
30
- Amperes
120
150
40
IXTN46N50L
T
180
J
= -40ºC
50
125ºC
25ºC
210
60
240
270
70