IXTN46N50L IXYS, IXTN46N50L Datasheet - Page 5

• Manufacturer Part Number: IXTN46N50L
• Description: MOSFET N-CH 500V 46A SOT-227B
• Manufacturer: IXYS

Specifications of IXTN46N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 6V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 15V
• Input Capacitance (ciss) @ Vds: 7000pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 46 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 46
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 7000
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): 600
• Pd, (w): 700
• Rthjc, Max, (k/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
1000
1.000
0.100
0.010
0.001
100
0.1
10
1
10
0.1
R
Operating Area @ T
DS
Fig. 12. Forw ard-Bias Safe
(on)
Limit
V
D S
100
- Volts
Fig. 14. Maxim um Transient Therm al Im pedance
C
1
= 25ºC
DC
T
J
= 150ºC
100µs
1ms
25µs
10ms
Pulse Width - milliseconds
1000
10
1000
100
0.1
10
1
10
R
DS
Operating Area @ T
Fig. 13. Forw ard-Bias Safe
(on)
Limit
V
100
D S
100
- Volts
IXYS REF: T_46N50L (8L) 4-05-07-A.xls
IXTN46N50L
C
= 90ºC
DC
T
J
= 150ºC
100µs
1ms
10ms
25µs
1000
1000