APT40M70JVFR Microsemi Power Products Group, APT40M70JVFR Datasheet - Page 2

• Manufacturer Part Number: APT40M70JVFR
• Description: MOSFET N-CH 400V 53A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT40M70JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 26.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 495nC @ 10V
• Input Capacitance (ciss) @ Vds: 8890pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL / PACKAGE CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
V
Torque
temperature
t
Isolation
t
I
R
C
R
C
C
V
dv
Q
Q
d(on)
d(off)
I
Q
RRM
Q
SM
t
I
t
t
θJC
oss
θJA
rss
SD
iss
S
rr
gd
/
gs
r
f
rr
g
dt
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
[Cont.],
[Cont.],
[Cont.],
D=0.5
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
di
di
di
10
/
/
/
dt
dt
dt
-4
3
= 100A/µs)
= 100A/µs)
= 100A/µs)
SINGLE PULSE
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
10
D
D
4 Starting T
5
-2
Test Conditions
= I
= I
V
V
dv
device itself.
DD
DD
D
D
/
V
V
V
R
dt
f = 1 MHz
V
[Cont.] @ 25°C
[Cont.] @ 25°C
GS
GS
DS
G
numbers reflect the limitations of the test circuit rather than the
GS
= 0.5 V
= 0.5 V
T
T
T
T
T
T
= 0.6Ω
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
j
= +25°C, L = 1.78mH, R
DSS
DSS
I
S
10
≤
-1
-
I
D
53A
di
Note:
/
Peak T J = P DM x Z θJC + T C
2500
dt
MIN
MIN
MIN
Duty Factor D =
≤ 700A/µs
1.0
G
t 1
= 25
t 2
7410
1140
TYP
TYP
TYP
450
330
127
1.6
5.5
Ω
15
27
40
16
16
54
5
, Peak I
V
t 1
R
/ t 2
≤100V
APT40M70JVFR
8890
1600
MAX
L
MAX
0.28
MAX
212
250
500
675
495
190
1.3
40
10
53
15
60
32
32
80
10
= 53A
10
T
J
≤ 150
Amps
Amps
UNIT
UNIT
UNIT
°C/W
Volts
Volts
V/ns
lb•in
°
nC
µC
pF
ns
ns
C