APT40M70JVFR Microsemi Power Products Group, APT40M70JVFR Datasheet - Page 3

• Manufacturer Part Number: APT40M70JVFR
• Description: MOSFET N-CH 400V 53A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT40M70JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 26.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 495nC @ 10V
• Input Capacitance (ciss) @ Vds: 8890pF @ 25V
• Power - Max: 450W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
100
100
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
80
60
40
20
60
50
40
30
20
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-25
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
V
GS
J
V GS =6V, 7V, 10V & 15V
T
, JUNCTION TEMPERATURE (°C)
50
T J = +125°C
C
= 10V
D
T J = +25°C
, CASE TEMPERATURE (°C)
50
[Cont.]
2
0
T J = +125°C
25
T J = +25°C
75
T J = -55°C
100
50
4
100
75
5.5V
4.5V
4V
5V
T J = -55°C
150
100 125 150
6
125
150
200
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
100
1.8
1.6
1.4
1.2
1.0
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
0
V
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
= 10V @ 0.5 I
, JUNCTION TEMPERATURE (°C)
NORMALIZED TO
T
V GS =10V
, DRAIN CURRENT (AMPERES)
V GS =6V & 7V
40
C
, CASE TEMPERATURE (°C)
2
0
0
DS
V GS =10V
25
25
80
(ON) vs DRAIN CURRENT
V GS =15V
D
[Cont.]
50
50
4
120
75
75 100 125 150
V GS =20V
100 125 150
6
160
5.5V
4.5V
5V
4V
APT40M70JVFR
200
8