APT6010JFLL Microsemi Power Products Group, APT6010JFLL Datasheet - Page 2

• Manufacturer Part Number: APT6010JFLL
• Description: MOSFET N-CH 600V 47A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT6010JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 23.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 6710pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
V
Symbol
temperature
Isolation
R
I
t
V
dv
C
t
C
C
Q
RRM
I
Q
Q
d(on)
d(off)
E
E
E
E
SM
t
Q
I
θJC
SD
S
rr
oss
t
t
/
rss
iss
on
off
on
off
gs
gd
r
rr
f
dt
g
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
RMS Volatage
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
10
S
S
S
= -47A,
= -47A,
= -47A,
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D = 0.9
0.7
0.5
0.3
0.1
0.05
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
(50-60hHZ Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
3
10
-4
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
SINGLE PULSE
S
10
= -47A)
-3
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
DD
Test Conditions
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 400V, V
= 47A, R
= 47A, R
dt
= 400V V
V
V
= 47A @ 25°C
= 47A @ 25°C
V
V
V
R
V
f = 1 MHz
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
T
T
T
T
T
T
G
GS
j
j
j
j
j
j
= 0.6Ω
= 300V
= 300V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25V
= 10V
= 15V
= 0V
10
j
= +25°C, L = 2.72mH, R
G
G
GS
-2
GS
= 5Ω
= 5Ω
= 15V
I
= 15V
S
≤
-
I
D
47A
Note:
di
Peak T J = P DM x Z θJC + T C
/
dt
2500
MIN
MIN
MIN
Duty Factor D =
≤ 700A/µs
10
-1
t 1
G
= 25Ω, Peak I
t 2
6710
1250
1000
1060
TYP
TYP
150
770
845
TYP
2.0
6.8
15
27
90
30
75
12
17
34
10
t 1
V
/ t 2
R
≤ 600V
MAX
MAX
MAX
188
300
600
0.24
APT6010JFLL
1.3
L
47
15
1.0
= 47A
T
J
≤ 150
Amps
Amps
UNIT
Volts
UNIT
V/ns
UNIT
°C/W
Volts
µC
ns
nC
pF
ns
µ
°
J
C