APT6010JFLL Microsemi Power Products Group, APT6010JFLL Datasheet - Page 4

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APT6010JFLL

Manufacturer Part Number
APT6010JFLL
Description
MOSFET N-CH 600V 47A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT6010JFLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 23.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
6710pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT6010JFLL
Manufacturer:
APT
Quantity:
15 500
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
2500
2000
1500
1000
190
100
120
100
500
10
16
12
80
60
40
20
FIGURE 10, MAXIMUM SAFE OPERATING AREA
1
8
4
0
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
V
10
10
1
0
DS
LIMITED BY R DS (ON)
T C =+25°C
T J =+150°C
SINGLE PULSE
V
R
T
L = 100µH
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
E
diode reverse recovery
OPERATION HERE
J
DD
G
J
DD
G
ON
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
= 125°C
= 125°C
= 5Ω
= 5Ω
20
20
= 400V
= 400V
= 47A
includes
t
Q
d(off)
E
50
g
on
, TOTAL GATE CHARGE (nC)
30
30
10
40
40
V DS =120V
100
V DS =300V
I
I
D
D
50
50
(A)
(A)
t
d(on)
150
60
60
V DS =480V
E
off
100
70
70
200
80
80
250
600
90
90
100µS
1mS
10mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
1,000
4000
3000
2000
1000
100
200
100
140
120
100
10
10
80
60
40
20
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1
0
0
0.3
10
V
V
0
0
DS
SD
V
R
T
L = 100µH
V
I
T
L = 100µH
E
diode reverse recovery
D
DD
J
G
DD
J
ON
T J =+150°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 125°C
= 47A
= 125°C
= 5Ω
5
20
= 400V
= 400V
includes
0.5
R
10
10 15 20 25 30
G
, GATE RESISTANCE (Ohms)
30
0.7
t
f
40
20
T J =+25°C
I
D
0.9
50
(A)
E
on
30
60
1.1
t
35 40 45 50
r
E
70
off
40
1.3
80
C iss
C oss
C rss
1.5
50
90

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