APT50M50JLL Microsemi Power Products Group, APT50M50JLL Datasheet - Page 3

• Manufacturer Part Number: APT50M50JLL
• Description: MOSFET N-CH 500V 71A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT50M50JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 35.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 71A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 10550pF @ 25V
• Power - Max: 595W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature
Junction
temp. ( ”C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
180
160
140
120
100
Power
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
80
70
60
50
40
30
20
10
0
0
-50
25
0
V
V DS > I D (ON) x R DS(ON) MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
GS
FIGURE 8, R
250µSEC. PULSE TEST
V
-25
@ <0.5 % DUTY CYCLE
I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
D
GS
T
= 35.5A
J
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
C
, CASE TEMPERATURE (°C)
2
0
RC MODEL
DS(ON)
25
3
75
T J = +125°C
0.0492
0.142
0.0189
T J = +25°C
50
4
vs. TEMPERATURE
T J = -55°C
100
75
5
100 125 150
6
125
0.0273F
0.469F
44.2F
7
150
8
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
200
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
80
60
40
20
0
-50
-50
0
0
15 &10V
V
V
DS
GS
FIGURE 5, R
20
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
NORMALIZED TO
-25
-25
= 10V @ I
T
I
5
J
V GS =10V
D
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
C
40
, CASE TEMPERATURE (°C)
0
0
D
10
60
DS(ON)
= 35.5A
25
25
7.5V
80
15
50
vs DRAIN CURRENT
50
100 120 140 160 180
7V
V GS =20V
75
75
6.5V
20
100 125 150
100 125 150
25
6V
5.5V
5V
30