APT50M50JLL Microsemi Power Products Group, APT50M50JLL Datasheet - Page 4

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APT50M50JLL

Manufacturer Part Number
APT50M50JLL
Description
MOSFET N-CH 500V 71A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT50M50JLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 35.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
71A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
10550pF @ 25V
Power - Max
595W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50M50JLL
Manufacturer:
LT
Quantity:
4 490
Part Number:
APT50M50JLL
Manufacturer:
CYNTEC
Quantity:
30 000
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
3000
2500
2000
1500
1000
120
100
500
356
100
10
16
12
80
60
40
20
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
1
8
4
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10
10
1
0
V
V
R
T
L = 100µH
E
diode reverse recovery.
T C =+25°C
T J =+150°C
SINGLE PULSE
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
DS
J
DD
G
ON
LIMITED BY R DS (ON)
J
DD
G
OPERATION HERE
I
= 125°C
D
= 3Ω
= 125°C
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 3Ω
= 333V
includes
= 71A
= 333V
50
Q
30
30
g
, TOTAL GATE CHARGE (nC)
t
d(on)
100
E
10
on
V DS =250V
50
50
I
I
D
D
V DS =100V
150
(A)
(A)
E
off
70
70
200
t
d(off)
100
V DS =400V
90
90
250
300
500
110
110
1mS
100µS
10mS
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
30,000
10,000
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
7000
6000
5000
4000
3000
2000
1000
100
200
100
160
140
120
100
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
10
80
60
40
20
1
0
0
0.3
10
0
0
V
V
V
I
T
L = 100µH
E
diode reverse recovery.
V
R
T
L = 100µH
D
DS
SD
J
J
DD
ON
DD
G
= 71A
= 125°C
= 125°C
5
= 3Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 333V
includes
= 333V
0.5
T J =+150°C
R
10
10
30
G
, GATE RESISTANCE (Ohms)
15 20 25 30 35 40
0.7
E
on
20
50
I
D
0.9
t
r
(A)
T J =+25°C
30
70
1.1
E
t
off
f
40
90
1.3
C iss
C oss
C rss
45 50
1.5
110
50

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