APTM50DHM75TG Microsemi Power Products Group, APTM50DHM75TG Datasheet - Page 4

• Manufacturer Part Number: APTM50DHM75TG
• Description: MOSFET MOD ASYMMETRIC BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50DHM75TG

• Fet Type: 2 N-Channel (Asymmetrical Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 5600pF @ 25V
• Power - Max: 357W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.35
0.25
0.15
0.05
180
160
140
120
100
0.4
0.3
0.2
0.1
80
60
40
20
0.00001
0
0
0
0
Low Voltage Output Characteristics
Normalized to
V
0.9
0.7
0.5
0.05
GS
V
0.3
0.1
V
GS
DS
=10V @ 23A
R
=10&15V
, Drain to Source Voltage (V)
DS
20
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5
(on) vs Drain Current
I
D
, Drain Current (A)
0.0001
40
10
60
15
V
GS
=10V
V
GS
=20V
80
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20
8V
rectangular Pulse Duration (Seconds)
0.001
7.5V
6.5V
5.5V
7V
6V
Single Pulse
100
25
0.01
120
100
APTM50DHM75TG
80
60
40
20
50
40
30
20
10
0
0
DC Drain Current vs Case Temperature
25
0
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
V
1
> I
GS
T
50
D
Transfert Characteristics
C
, Gate to Source Voltage (V)
(on)xR
, Case Temperature (°C)
2
T
J
DS
=125°C
3
75
(on)MAX
T
J
4
=25°C
1
100
5
6
125
T
J
=-55°C
7
10
150
8
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