APTM50DHM75TG Microsemi Power Products Group, APTM50DHM75TG Datasheet - Page 5

• Manufacturer Part Number: APTM50DHM75TG
• Description: MOSFET MOD ASYMMETRIC BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50DHM75TG

• Fet Type: 2 N-Channel (Asymmetrical Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 123nC @ 10V
• Input Capacitance (ciss) @ Vds: 5600pF @ 25V
• Power - Max: 357W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
T
, Drain to Source Voltage (V)
10
C
, Case Temperature (°C)
0
0
25
25
20
50
50
30
75 100 125 150
75 100 125 150
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40
Ciss
Coss
Crss
50
1000
100
APTM50DHM75TG
10
14
12
10
2.5
2.0
1.5
1.0
0.5
0.0
1
Gate Charge vs Gate to Source Voltage
8
6
4
2
0
1
0
-50 -25
limited by R
I
T
D
limited by R
J
V
I
V
=46A
D
=25°C
20
GS
T
=23A
DS
ON resistance vs Temperature
Maximum Safe Operating Area
J
=10V
, Junction Temperature (°C)
, Drain to Source Voltage (V)
Single pulse
T
T
40
DSon
Gate Charge (nC)
J
C
0
=150°C
=25°C
DS
10
on
60
25
80 100 120 140 160
V
50
DS
=250V
75 100 125 150
100
V
DS
=100V
V
DS
=400V
100µs
10ms
1ms
1000
5 – 6