APTM120A80FT1G Microsemi Power Products Group, APTM120A80FT1G Datasheet
APTM120A80FT1G
Specifications of APTM120A80FT1G
Related parts for APTM120A80FT1G
APTM120A80FT1G Summary of contents
Page 1
... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120A80FT1G V = 1200V DSS R = 800mΩ typ @ Tj = 25°C DSon I = 14A @ Tc = 25°C D Application • ...
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... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 12A di/dt ≤ 1000A/µ APTM120A80FT1G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V 125°C ...
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... Symbol Characteristic R Resistance @ 25° 298.15 K 25/ ⎡ ⎢ exp B ⎣ SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTM120A80FT1G To heatsink R T: Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ − ⎥ ⎝ ...
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... T , Junction Temperature (°C) J Gate Charge vs Gate to Source 12 I =12A =25° =600V 120 160 Gate Charge (nC) APTM120A80FT1G Low Voltage Output Characteristics =125° 125 150 Capacitance vs Drain to Source Voltage 10000 =240V DS 1000 V =960V DS 100 10 200 240 280 www.microsemi.com =125°C ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120A80FT1G T =25° ...