APTM120A80FT1G Microsemi Power Products Group, APTM120A80FT1G Datasheet - Page 5

• Manufacturer Part Number: APTM120A80FT1G
• Description: MOSFET MODULE PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120A80FT1G

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 960 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 6696pF @ 25V
• Power - Max: 357W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.4
0.3
0.2
0.1
50
40
30
20
10
0.00001
0
0
0
Drain Current vs Source to Drain Voltage
0.05
0.1
0.9
0.3
0.7
0.5
V
SD
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
, Source to Drain Voltage (V)
0.4
0.0001
0.6
T
J
=125°C
0.8
0.001
T
rectangular Pulse Duration (Seconds)
J
1
=25°C
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1.2
Single Pulse
0.01
APTM120A80FT1G
0.1
1
10
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