IXFE73N30Q IXYS, IXFE73N30Q Datasheet
IXFE73N30Q
Manufacturer Part Number
IXFE73N30Q
Description
MOSFET N-CH 300V 66A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFE73N30Q.pdf
(2 pages)
Specifications of IXFE73N30Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
46 mOhm @ 36.5A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
66A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
6400pF @ 25V
Power - Max
400W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.046 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
66 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.046
Ciss, Typ, (pf)
6400
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
ISOPLUS227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Preliminary data sheet
DM
D25
AR
GSS
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Test Conditions
V
V
V
V
V
V
Note1
S
ISOL
J
J
C
C
C
C
J
C
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, Note1
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
, di/dt 100 A/ s, V
DSS
, I
D
D
DC
D
= 1 mA
= 4 mA
, V
= I
G
= 2
DS
T
g
, High dv/dt
= 0
GS
= 1 M
DD
(T
T
T
J
J
J
V
= 25 C, unless otherwise specified)
DSS
= 25 C
= 125 C
,
300
min.
2.0
-55 to +150
-55 to +150
IXFE 73N30Q
Characteristic Values
Maximum Ratings
typ.
300
300
400
150
292
2.5
20
30
66
73
60
5
100
100
max.
4.0
46 m
2
V/ns
mJ
mA
W
nA
C
C
C
V
V
V
V
A
A
A
V
V
J
A
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
•
ISOPLUS 227
D25
rr
DSS
DS(on)
250 ns
DS (on)
= 300
=
=
TM
G
(IXFE)
66
46 m
D = Drain
TM
D
S
98899 (1/02)
V
A
S
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IXFE73N30Q Summary of contents
Page 1
... GS(th GSS DSS DS DSS DS(on Note1 © 2002 IXYS All rights reserved IXFE 73N30Q Maximum Ratings 300 = 1 M 300 292 DSS 400 -55 to +150 150 -55 to +150 Characteristic Values ( unless otherwise specified) J min. typ. max. 300 2.0 100 100 125 C ...
Page 2
... JM. 2. Pulse test, t 300 ms, duty cycle 36 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 6400 1340 340 37 ...