IXFE73N30Q IXYS, IXFE73N30Q Datasheet - Page 2

• Manufacturer Part Number: IXFE73N30Q
• Description: MOSFET N-CH 300V 66A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFE73N30Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 36.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 66A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 6400pF @ 25V
• Power - Max: 400W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.046 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 66 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 66
• Rds(on), Max, Tj=25°c, (?): 0.046
• Ciss, Typ, (pf): 6400
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (ºc/w): 0.31
• Package Style: ISOPLUS227™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
g(on)
gs
gd
2. Pulse test, t
I
T
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t
F
GS
DS
= I
I
F
S
= 0 V
= 10 V; I
V
V
R
V
, V
= 25A, -di/dt = 100 A/ s, V
GS
GS
GS
G
= 1.0
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
300 ms, duty cycle d
I
T
D
= 36.5 A
300 s, duty cycle d
= I
(External),
T
DS
, Note2
DS
DS
= 25 V, f = 1 MHz
JM.
= 0.5 • V
= 0.5 • V
(T
(T
DSS
DSS
J
J
R
= 25 C, unless otherwise specified)
, I
, I
= 25 C, unless otherwise specified)
= 100 V
D
D
2%
JM
= I
= I
2 %
T
T
min.
min.
30
Characteristic Values
Characteristic Values
4,835,592
4,850,072
6400
1340
0.07
typ.
typ.
340
190
0.8
47
37
36
82
12
51
78
7
4,881,106
4,931,844
0.31
max.
max.
292
250
1.5
73
5,017,508
5,034,796
K/W
K/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
C
S
A
A
V
A
5,049,961
5,063,307
ISOPLUS-227 B
5,187,117
5,237,481
IXFE 73N30Q
5,486,715
5,381,025
6,306,728B1