IXFN66N50Q2 IXYS, IXFN66N50Q2 Datasheet

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IXFN66N50Q2

Manufacturer Part Number
IXFN66N50Q2
Description
MOSFET N-CH 500V 66A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN66N50Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
66A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
199nC @ 10V
Input Capacitance (ciss) @ Vds
6800pF @ 25V
Power - Max
735W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.074 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
66 A
Power Dissipation
735 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
66
Rds(on), Max, Tj=25°c, (?)
0.08
Ciss, Typ, (pf)
9125
Qg, Typ, (nc)
200
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
735
Rthjc, Max, (ºc/w)
0.17
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN66N50Q2
Manufacturer:
INFINEON
Quantity:
1 000
Part Number:
IXFN66N50Q2
Quantity:
121
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
DSS
DGR
GSM
AR
AS
D
J
JM
stg
GS
ISOL
d
DSS
GS(th)
DS(on)
© 2003 IXYS All rights reserved
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Test Conditions
S
V
V
V
V
V
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= V
= ±30 V, V
= 0 V
= 10 V, I
= 0 V, I
= V
DM
, di/dt ≤ 100 A/µs, V
DSS
TM
rr
GS
, I
D
D
D
= 8mA
= 3mA
G
= 0.5 ï I
DS
= 2 Ω
= 0
g
, Low Intrinsic R
GS
D25
= 1 MΩ
DD
(T
T
T
≤ V
J
J
J
= 25°C
= 125°C
DSS
= 25°C, unless otherwise specified)
JM
IXFN66N50Q2
g
min.
500
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
500
500
±30
±40
264
735
150
4.0
66
66
75
20
30
max.
±200 nA
4.5
50 µA
80 mΩ
3 mA
V/ns
mJ
°C
°C
°C
W
V
V
V
V
A
A
A
V
g
V
J
V
V
I
R
t
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Applications
Advantages
miniBLOC, SOT-227 B (IXFN)
D25
rr
l
miniBLOC, with Aluminium nitride
isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
gate resistance
Double metal process for low
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generators
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
≤ ≤ ≤ ≤ ≤ 250 ns
= 80 mΩ Ω Ω Ω Ω
= 500 V
= 66
G
D = Drain
S
DS99077A(08/05)
D
A
S

Related parts for IXFN66N50Q2

IXFN66N50Q2 Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS 0.5 ï I DS(on © 2003 IXYS All rights reserved IXFN66N50Q2 g Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 66 264 4.0 ≤ DSS 735 -55 ... +150 150 -55 ... +150 2500 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 2

... D25 92 0.17 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. JM 1.0 10 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN66N50Q2 miniBLOC, SOT-227 B Outline screws (4x) supplied ns Dim. Millimeter ns Min. Max. A 31.50 31. 7.80 8.20 C 4.09 4. ...

Page 3

... C 3.1 2.8 2.5 6V 2.2 1.9 5.5V 5V 1.6 1.3 4.5V 0.7 3.5V 0 125∫ 25∫C J 100 120 140 160 IXFN66N50Q2 Fig. 2. Extended Output Characteristics º 10V Volts D S Fig Norm alized to 0.5 I DS(on ) Value vs. Junction Tem perature V = 10V 66A D 1 -50 ...

Page 4

... V - Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 5 25∫C J 0.9 1 1.1 1.2 1.3 1000 C iss 100 C oss C rss IXFN66N50Q2 Fig. 8. Transconductance -40∫ 25∫C 125∫ Amperes D Fig. 10. Gate Charge 250V 33A D ...

Page 5

... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 1 10 100 Pulse Width - milliseconds IXFN66N50Q2 1000 10000 ...

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