IXFN66N50Q2 IXYS, IXFN66N50Q2 Datasheet - Page 5

• Manufacturer Part Number: IXFN66N50Q2
• Description: MOSFET N-CH 500V 66A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN66N50Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 66A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 199nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 735W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.074 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 66 A
• Power Dissipation: 735 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 66
• Rds(on), Max, Tj=25°c, (?): 0.08
• Ciss, Typ, (pf): 9125
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 735
• Rthjc, Max, (ºc/w): 0.17
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFN66N50Q2
Fig. 13. Maxim um Transient Therm al Resistance
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