IXFN30N110P IXYS, IXFN30N110P Datasheet - Page 2

• Manufacturer Part Number: IXFN30N110P
• Description: MOSFET N-CH 1100V 25A SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN30N110P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 1100V (1.1kV)
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 235nC @ 10V
• Input Capacitance (ciss) @ Vds: 13600pF @ 25V
• Power - Max: 695W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.36 Ohms
• Drain-source Breakdown Voltage: 1100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 25 A
• Power Dissipation: 695 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1100
• Id(cont), Tc=25°c, (a): 25
• Rds(on), Max, Tj=25°c, (?): 0.36
• Ciss, Typ, (pf): 13600
• Qg, Typ, (nc): 235
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 695
• Rthjc, Max, (ºc/w): 0.18
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
Gate input resistance
V
V
Repetitive, pulse width limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 20A, -di/dt = 100A/μs
= I
= 100V , V
= 1Ω (External)
= 10V, V
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
DS
GS
= 15A, Note 1
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
= 0V
DSS
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 15A
= 15A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
15
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
13.6
1.50
0.05
Typ.
795
235
102
1.8
13
70
50
48
83
52
79
25
0.18 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
120
300 ns
30
1.5
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN30N110P
7,005,734 B2
7,063,975 B2
7,157,338B2