IXFN30N110P IXYS, IXFN30N110P Datasheet - Page 2
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IXFN30N110P
Manufacturer Part Number
IXFN30N110P
Description
MOSFET N-CH 1100V 25A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN30N110P.pdf
(4 pages)
Specifications of IXFN30N110P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
360 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
1100V (1.1kV)
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
13600pF @ 25V
Power - Max
695W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.36 Ohms
Drain-source Breakdown Voltage
1100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
25 A
Power Dissipation
695 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1100
Id(cont), Tc=25°c, (a)
25
Rds(on), Max, Tj=25°c, (?)
0.36
Ciss, Typ, (pf)
13600
Qg, Typ, (nc)
235
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
695
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN30N110P
Manufacturer:
TOSHIBA
Quantity:
1 000
Part Number:
IXFN30N110P
Quantity:
109
Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
V
Gate input resistance
V
V
Repetitive, pulse width limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 20A, -di/dt = 100A/μs
= I
= 100V , V
= 1Ω (External)
= 10V, V
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
DS
GS
= 15A, Note 1
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
= 0V
DSS
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 15A
= 15A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
15
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
13.6
1.50
0.05
Typ.
795
235
102
1.8
13
70
50
48
83
52
79
25
0.18 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
120
300 ns
30
1.5
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN30N110P
7,005,734 B2
7,063,975 B2
7,157,338B2