IXFN30N110P IXYS, IXFN30N110P Datasheet - Page 4
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IXFN30N110P
Manufacturer Part Number
IXFN30N110P
Description
MOSFET N-CH 1100V 25A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet
1.IXFN30N110P.pdf
(4 pages)
Specifications of IXFN30N110P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
360 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
1100V (1.1kV)
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
235nC @ 10V
Input Capacitance (ciss) @ Vds
13600pF @ 25V
Power - Max
695W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.36 Ohms
Drain-source Breakdown Voltage
1100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
25 A
Power Dissipation
695 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1100
Id(cont), Tc=25°c, (a)
25
Rds(on), Max, Tj=25°c, (?)
0.36
Ciss, Typ, (pf)
13600
Qg, Typ, (nc)
235
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
695
Rthjc, Max, (ºc/w)
0.18
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN30N110P
Manufacturer:
TOSHIBA
Quantity:
1 000
Part Number:
IXFN30N110P
Quantity:
109
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
90
80
70
60
50
40
30
20
10
40
35
30
25
20
15
10
5
0
0
100
0.3
10
4.5
0
0.4
f
5.0
= 1 MHz
5
Fig. 9. Forward Voltage Drop of
0.5
Fig. 7. Input Admittance
10
5.5
Fig. 11. Capacitance
T
J
0.6
= 125ºC
Intrinsic Diode
V
V
15
V
SD
GS
6.0
0.7
DS
T
J
- Volts
- Volts
= 125ºC
- Volts
- 40ºC
20
25ºC
0.8
6.5
25
0.9
T
J
7.0
= 25ºC
30
1.0
C iss
C oss
C rss
7.5
1.1
35
1.2
8.0
40
1.000
0.100
0.010
0.001
55
50
45
40
35
30
25
20
15
10
16
14
12
10
0.00001
8
6
4
2
0
5
0
0
0
V
I
I
D
G
DS
5
Fig. 12. Maximum Transient Thermal
= 15A
= 10mA
0.0001
50
= 550V
10
Fig. 8. Transconductance
100
15
0.001
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
- NanoCoulombs
I
D
Impedance
20
- Amperes
150
0.01
25
IXFN30N110P
200
30
IXYS REF: F_30N110P(96) 04-01-08-A
T
J
0.1
= - 40ºC
35
250
125ºC
25ºC
40
1
300
45
10
350
50