IXFN52N90P IXYS, IXFN52N90P Datasheet - Page 2

• Manufacturer Part Number: IXFN52N90P
• Description: MOSFET N-CH 900V 43A SOT227
• Manufacturer: IXYS
• Series: Polar™r
• Type: Polar Power MOSFETr

Specifications of IXFN52N90P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 308nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: MOSFET Gate Drivers
• Rise Time: 80 ns
• Fall Time: 42 ns
• Supply Current: 26 A
• Maximum Power Dissipation: 890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 95 ns
• Maximum Turn-on Delay Time: 63 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 43 A
• Output Voltage: 900 V
• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 43
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 308
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 890
• Rthjc, Max, (ºc/w): 0.14
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
I
V
Test Conditions
V
Gate input resistance
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
F
F
R
DS
GS
GS
GS
GS
G
= 26A, -di/dt = 100A/μs
= I
= 100V
PRELIMINARY TECHNICAL INFORMATION
= 0V
= 20V, I
= 10V, V
= 1Ω (External)
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
DS
= 26A, Note 1
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 26A
= 26A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
20
Min.
Characteristic Values
Characteristic Values
1180
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
1.56
0.05
Typ.
308
117
132
1.8
26
19
24
63
80
95
42
35
0.14 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
208
300 ns
1.5
56
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN52N90P
7,005,734 B2
7,063,975 B2
7,157,338B2