IXFN52N90P IXYS, IXFN52N90P Datasheet - Page 4

• Manufacturer Part Number: IXFN52N90P
• Description: MOSFET N-CH 900V 43A SOT227
• Manufacturer: IXYS
• Series: Polar™r
• Type: Polar Power MOSFETr

Specifications of IXFN52N90P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 308nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: MOSFET Gate Drivers
• Rise Time: 80 ns
• Fall Time: 42 ns
• Supply Current: 26 A
• Maximum Power Dissipation: 890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 95 ns
• Maximum Turn-on Delay Time: 63 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 43 A
• Output Voltage: 900 V
• Vdss, Max, (v): 900
• Id(cont), Tc=25°c, (a): 43
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 308
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 890
• Rthjc, Max, (ºc/w): 0.14
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
160
140
120
100
100
80
60
40
20
70
60
50
40
30
20
10
10
0
0
0.3
5.0
0
f = 1 MHz
0.4
5.5
5
Fig. 9. Forward Voltage Drop of
0.5
6.0
10
Fig. 7. Input Admittance
0.6
T
Fig. 11. Capacitance
J
6.5
= 125ºC
Intrinsic Diode
15
0.7
V
V
V
T
SD
DS
GS
J
7.0
= 125ºC
- Volts
- Volts
- Volts
- 40ºC
0.8
25ºC
20
7.5
0.9
25
T
J
8.0
C iss
C oss
C rss
= 25ºC
1.0
30
8.5
1.1
35
9.0
1.2
1.3
9.5
40
1.000
0.100
0.010
0.001
70
60
50
40
30
20
10
16
14
12
10
0.0001
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
50
10
= 26A
= 10mA
Fig. 12. Maximum Transient Thermal
= 450V
0.001
100
Fig. 8. Transconductance
20
Fig. 10. Gate Charge
Q
150
Pulse Width - Seconds
G
30
- NanoCoulombs
0.01
I
D
Impedance
200
- Amperes
40
IXFN52N90P
250
0.1
50
T
300
J
= - 40ºC
125ºC
25ºC
IXYS REF: F_52N90P(97)10-24-08
60
350
1
70
400
450
10
80