IXFN32N120P IXYS, IXFN32N120P Datasheet

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IXFN32N120P

Manufacturer Part Number
IXFN32N120P
Description
MOSFET N-CH 1200V 32A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN32N120P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
310 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
360nC @ 10V
Input Capacitance (ciss) @ Vds
21000pF @ 25V
Power - Max
1000W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.31 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
32 A
Power Dissipation
830 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.31
Ciss, Typ, (pf)
21000
Qg, Typ, (nc)
360
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1000
Rthjc, Max, (ºc/w)
0.125
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN32N120P
Quantity:
148
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS Corporation, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
HiPerFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS
I
Mounting Torque
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 1mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
TM
, T
t = 1 minute
t = 1 second
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFN32N120P
1200
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
2500
3000
1200
1200
1000
Typ.
±30
±40
150
300
260
100
32
16
20
30
2
Max.
±300
6.5
310 mΩ
Nm/lb.in.
Nm/lb.in.
50
5
V/ns
mA
V~
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
J
g
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
Advantages
Applications
D25
rr
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation Voltage 2500
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
High Voltage Switch-Mode and
Resonant-ModePower Supplies
High Voltage Pulse Power
Applications
High Voltage Discharge Circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC Converters
High Voltage DC-AC Inverters
Isolation
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
DS(on)
G
= 1200V
= 32A
≤ ≤ ≤ ≤ ≤ 310mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
HDMOS
S
D = Drain
D
TM
DS99718H(03/10)
Process
V~
S

Related parts for IXFN32N120P

IXFN32N120P Summary of contents

Page 1

... ±30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS Corporation, All Rights Reserved IXFN32N120P Maximum Ratings 1200 = 1MΩ 1200 GS ±30 ±40 32 100 ≤ 150° 1000 -55 ... +150 150 -55 ... +150 300 260 2500 3000 1.5/13 1.3/11.5 30 Characteristic Values Min. ...

Page 2

... I = 0.5 • I 130 DSS D D25 160 0.05 Characteristic Values Min. Typ. JM 1.9 15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN32N120P SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied 0.125 °C/W °C/W Max 128 A 1.5 V 300 ns μC ...

Page 3

... J 3 10V GS 8V 2.6 2.2 1.8 7V 1.4 1.0 6V 0.6 0 16A Value 125º 25º IXFN32N120P Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 32A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 35 30 ...

Page 4

... MHz Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 7.5 8.0 8.5 9.0 - Volts T = 25ºC J 0.8 0.9 1.0 1.1 1.2 1000 C iss C oss C rss 0. IXFN32N120P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 600V 16A 10mA ...

Page 5

... IXYS Corporation, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXFN32N120P 0.1 1 IXYS REF: F_32N120P(99) 3-04-10-D 10 ...

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