IXFN32N120P IXYS, IXFN32N120P Datasheet - Page 4

• Manufacturer Part Number: IXFN32N120P
• Description: MOSFET N-CH 1200V 32A SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN32N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 310 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 21000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.31 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 32 A
• Power Dissipation: 830 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.31
• Ciss, Typ, (pf): 21000
• Qg, Typ, (nc): 360
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1000
• Rthjc, Max, (ºc/w): 0.125
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
100
90
80
70
60
50
40
30
20
10
50
45
40
35
30
25
20
15
10
10
5
0
0
0.3
5.0
0
f = 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5.5
5
0.5
6.0
10
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
6.5
T
15
J
= 125ºC
T
- 40ºC
J
V
V
0.7
V
25ºC
SD
= 125ºC
DS
GS
- Volts
7.0
- Volts
20
- Volts
0.8
7.5
25
0.9
T
8.0
J
30
1.0
= 25ºC
C iss
C oss
C rss
8.5
35
1.1
1.2
9.0
40
1000
0.01
100
0.1
70
60
50
40
30
20
10
16
14
12
10
10
0
1
8
6
4
2
0
10
0
0
T
Tc = 25ºC
Single Pulse
V
I
I
D
G
R
J
DS
50
= 150ºC
DS(on)
5
= 16A
= 10mA
= 600V
Fig. 12. Forward-Bias Safe Operating Area
Limit
100
10
150
Fig. 8. Transconductance
15
100
Fig. 10. Gate Charge
Q
200
20
G
V
- NanoCoulombs
DS
I
D
- Volts
- Amperes
250
25
IXFN32N120P
300
DC
30
1,000
350
35
25µs
100µs
1ms
10ms
100ms
T
J
= - 40ºC
400
40
25ºC
125ºC
450
45
10,000
500
50