IXTN21N100 IXYS, IXTN21N100 Datasheet - Page 3

• Manufacturer Part Number: IXTN21N100
• Description: MOSFET N-CH 1KV 21A SOT-227B
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTN21N100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4.5V @ 500µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 8400pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 24 s
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 520 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.5
1.4
1.3
1.2
1.1
1.0
0.9
40
35
30
25
20
15
10
25
20
15
10
5
0
5
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
T
J
J
= 25°C
= 25°C
5
-25
10 15 20 25 30 35 40 45 50
Case Temperature
DS(on)
5
0
T
vs. Drain Current
25
I
C
D
V
- Degrees C
V
- Amperes
DS
GS
10
- Volts
50
= 10V
V
GS
= 15V
75
100 125 150
15
V
GS
= 10V
6V
5V
20
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
40
35
30
25
20
15
10
5
0
-50
-50
Fig. 4 Temperature Dependence
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
0
1
-25
-25
V
GS(th)
of Drain to Source Resistance
Breakdown and Threshold Voltage
2
0
0
3
T
T
T
J
25
25
= 25°C
J
J
V
4
- Degrees C
- Degrees C
I
GS
D
= 12A
50
50
- Volts
5
6
75
75
IXTK 21N100
IXTN 21N100
7
100 125 150
100 125 150
BV
8
DSS
9
10
3 - 4