IXTN21N100 IXYS, IXTN21N100 Datasheet - Page 4

• Manufacturer Part Number: IXTN21N100
• Description: MOSFET N-CH 1KV 21A SOT-227B
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTN21N100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4.5V @ 500µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 8400pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 24 s
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 520 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
0.1
10
40
35
30
25
20
15
10
0.0001
1
9
8
7
6
5
4
3
2
1
0
5
0
0.0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Source Current vs. Source
Fig.10 Transient Thermal Impedance
D=0.02
D=0.5
D=0.2
D=0.1
D=0.05
D=0.01
V
I
I
D
G
DS
0.2
= 12A
= 10mA
50
Single pulse
= 500V
to Drain Voltage
T
Gate Charge - nCoulombs
J
= 125°C
0.4
100
V
0.6
SD
0.001
150
- Volts
0.8
T
J
= 25°C
200
1.0
250
1.2
D = Duty Cycle
300
1.4
0.01
Pulse Width - Seconds
9000
8000
7000
6000
5000
4000
3000
2000
1000
0.1
0
Fig.8 Capacitance Curves
0
5
C
C
C
iss
oss
rss
V
10
DS
f = 1 MHz
V
DS
- Volts
1
= 25V
15
IXTK 21N100
IXTN 21N100
20
10
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