VSKT250-12 Vishay, VSKT250-12 Datasheet - Page 2

SCR DBL HISCR 1200V 230A MAGNPAK

VSKT250-12

Manufacturer Part Number
VSKT250-12
Description
SCR DBL HISCR 1200V 230A MAGNPAK
Manufacturer
Vishay
Datasheets

Specifications of VSKT250-12

Structure
Series Connection - All SCRs
Number Of Scrs, Diodes
2 SCRs
Voltage - Off State
1200V
Current - Gate Trigger (igt) (max)
200mA
Current - On State (it (av)) (max)
250A
Current - On State (it (rms)) (max)
555A
Current - Non Rep. Surge 50, 60hz (itsm)
8500A, 8900A
Current - Hold (ih) (max)
500mA
Mounting Type
Chassis Mount
Package / Case
3-MAGN-A-PAK™
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Holding Current (ih Max)
500 mA
Mounting Style
Screw
Breakover Current Ibo Max
8900 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
1200 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRKT250-12
IRKT250-12
IRKT250-12
VSK.250, VSK.270, VSK.320 Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
www.vishay.com
2
VOLTAGE RATINGS
TYPE NUMBER
VSK.250
VSK.270
VSK.320
VSK.270
FORWARD CONDUCTION
PARAMETER
Maximum average forward
current at case temperature
Maximum RMS forward current
Maximum peak, one-cycle
forward, non-repetitive
surge current
Maximum I
Maximum I
Low level value of
threshold voltage
High level value of
threshold voltage
Low level forward
slope resistance
High level forward
slope resistance
Maximum forward voltage drop
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
RMS insulation voltage
2
2
t for fusing
t for fusing
VOLTAGE
CODE
04
08
12
16
20
30
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
SYMBOL
SYMBOL
V
V
I
F(RMS)
I
I
V
I
F(TO)1
F(TO)2
V
F(AV)
I
RRM
FSM
2
I
r
r
INS
2
FM
f1
f2
t
V
t
RRM,
PEAK REVERSE VOLTAGE
Standard Recovery Diodes, 250 A to 320 A
MAXIMUM REPETITIVE
180° conduction, half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x  x I
T
(I >  x I
(16.7 % x  x I
T
(I >  x I
I
Average power = V
T
50 Hz, circuit to base, all terminals shorted, t = 1 s
FM
J
J
J
= T
= T
= 150 °C
=  x I
(MAGN-A-PAK Power Modules)
1200
1600
2000
3000
400
800
J
J
V
maximum
maximum
F(AV)
F(AV)
F(AV)
), T
), T
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
, T
F(AV)
F(AV)
TEST CONDITIONS
TEST CONDITIONS
J
J
J
= T
= T
= T
< I <  x I
< I <  x I
F(TO)
J
J
J
maximum
maximum
RRM
RRM
maximum, 180° conduction
x I
F(AV)
F(AV)
F(AV)
Sinusoidal half wave,
initial T
+ r
V
),
),
RSM
f
x (I
J
PEAK REVERSE VOLTAGE
DiodesEurope@vishay.com
, MAXIMUM NON-REPETITIVE
= T
F(RMS)
J m
aximum
)
2
1300
1700
2100
3100
500
900
V
VSK.250 VSK.270 VSK.320 UNITS
7015
7345
5900
6180
2460
0.79
0.92
0.63
0.49
1.29
250
100
393
246
225
174
159
VALUES
3000
50
8920
9340
7500
7850
3980
0.74
0.87
0.94
0.81
1.48
270
100
424
398
363
281
257
Document Number: 93581
I
Revision: 02-Jul-10
RRM
10 110
10 580
8500
8900
5110
AT 150 °C
0.69
0.86
0.59
0.44
1.28
320
100
502
511
466
361
330
MAXIMUM
UNITS
mA
50
mA
V
kA
kA
m
°C
A
A
V
V
2
2
s
s

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