VSKT250-12 Vishay, VSKT250-12 Datasheet - Page 5

• Manufacturer Part Number: VSKT250-12
• Description: SCR DBL HISCR 1200V 230A MAGNPAK
• Manufacturer: Vishay

Specifications of VSKT250-12

• Structure: Series Connection - All SCRs
• Number Of Scrs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 200mA
• Current - On State (it (av)) (max): 250A
• Current - On State (it (rms)) (max): 555A
• Current - Non Rep. Surge 50, 60hz (itsm): 8500A, 8900A
• Current - Hold (ih) (max): 500mA
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 500 mA
• Mounting Style: Screw
• Breakover Current Ibo Max: 8900 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRKT250-12; IRKT250-12; IRKT250-12

Document Number: 93581
Revision: 02-Jul-10
Fig. 8 - Maximum Non-Repetitive Surge Current
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
1
VSK.250.. S eries
Per Junc tion
At Any Ra ted Loa d Cond ition And With
Rated V
R RM
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1800
1600
1400
1200
1000
1200
1000
800
600
400
200
800
600
400
200
Ap p lied Following Surge.
For technical questions within your region, please contact one of the following:
Standard Recovery Diodes, 250 A to 320 A
0
0
10
0
0
Initia l T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
100 200 300 400 500 600 700 800
100
(MAGN-A-PAK Power Modules)
T otal Output Current (A)
T otal Outp ut Current (A)
J
200
(Rec t)
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Forward Power Loss Characteristics
120°
100
3 x VSK.250.. S eries
T hree Phase Brid ge
S ingle Phase B rid ge
2 x VSK.250.. S eries
Connec ted
300
Connec ted
T = 150°C
(R ec t)
T = 150°C
(S ine)
180°
180°
J
J
400
VSK.250, VSK.270, VSK.320 Series
500
0
0
Maximum Allowab le Ambient T emp era ture (°C)
Maximum Allowable Ambient T emperature (°C)
25
25
50
50
Fig. 9 - Maximum Non-Repetitive Surge Current
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7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
75
75
0.01
Maximum Non Repetitive S urge Current
VSK.250.. S eries
Per Junc tion
100
100
Pulse T rain Duration (s)
125
125
Vishay Semiconductors
Versus Pulse T rain Duration.
R a ted V
No Voltage Reapp lied
150
150
0.1
Initial T = 150°C
R R M
Rea pplied
J
www.vishay.com
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