IRFHS9351TRPBF International Rectifier, IRFHS9351TRPBF Datasheet - Page 5
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IRFHS9351TRPBF
Manufacturer Part Number
IRFHS9351TRPBF
Description
MOSFET 2P-CH 30V 2.3A PQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFHS9351TRPBF.pdf
(8 pages)
Specifications of IRFHS9351TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
170 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
2.4V @ 10µA
Gate Charge (qg) @ Vgs
3.7nC @ 10V
Input Capacitance (ciss) @ Vds
160pF @ 25V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.3 A
Power Dissipation
1.4 W
Gate Charge Qg
1.9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
www.irf.com
500
400
300
200
100
+
Fig 12. On-Resistance vs. Gate Voltage
-
0
D.U.T
T J = 25°C
-V GS, Gate -to -Source Voltage (V)
Fig 15.
*
5
+
-
•
•
•
•
SD
T J = 125°C
10
•
•
•
400
300
200
100
15
0
-
1E-5
G
Fig 14. Typical Power vs. Time
I D = -3.1A
+
20
1E-4
+
-
25
1E-3
Time (sec)
Re-Applied
Voltage
Reverse
Recovery
Current
1E-2
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
500
400
300
200
100
P.W.
SD
1E-1
DS
Waveform
Waveform
0
Ripple ≤ 5%
Body Diode
Period
Vgs = -4.5V
Body Diode Forward
1E+0
Diode Recovery
Current
2
-I D , Drain Current (A)
dv/dt
Forward Drop
di/dt
®
Power MOSFETs
4
D =
Period
P.W.
Vgs = -10V
6
V
V
I
SD
GS
DD
=10V
8
5