IRFHS9351TRPBF International Rectifier, IRFHS9351TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFHS9351TRPBF
• Description: MOSFET 2P-CH 30V 2.3A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS9351TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 170 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 2.4V @ 10µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.4 W
• Gate Charge Qg: 1.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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500
400
300
200
100
+
Fig 12. On-Resistance vs. Gate Voltage
-
0
D.U.T
T J = 25°C
-V GS, Gate -to -Source Voltage (V)
Fig 15.
*
5
ƒ
+
-
•
•
•
•
SD
T J = 125°C
10
•
•
•
400
300
200
100
15
0
-
1E-5
G
„
Fig 14. Typical Power vs. Time
I D = -3.1A
+
20
1E-4
+
-
25
1E-3
Time (sec)
Re-Applied
Voltage
Reverse
Recovery
Current
1E-2
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
500
400
300
200
100
P.W.
SD
1E-1
DS
Waveform
Waveform
0
Ripple ≤ 5%
Body Diode
Period
Vgs = -4.5V
Body Diode Forward
1E+0
Diode Recovery
Current
2
-I D , Drain Current (A)
dv/dt
Forward Drop
di/dt
®
Power MOSFETs
4
D =
Period
P.W.
Vgs = -10V
6
V
V
I
SD
GS
DD
=10V
8
5